MMBT5087LT1G ON Semiconductor, MMBT5087LT1G Datasheet - Page 5

• Manufacturer Part Number: MMBT5087LT1G
• Description: TRANS GP SS PNP LN 50V SOT23
• Manufacturer: ON Semiconductor
• Type: Low Noiser

Specifications of MMBT5087LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100µA, 5V
• Power - Max: 225mW
• Frequency - Transition: 40MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: - 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 40 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250 at 0.1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -50 mA
• Current, Gain: 250
• Frequency: 40 MHz
• Package Type: SOT-23
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -50 V
• Voltage, Collector To Base: -50 V
• Voltage, Collector To Emitter: -50 V
• Voltage, Collector To Emitter, Saturation: -0.3 V
• Voltage, Emitter To Base: -3 V
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 250
• Frequency (max): 40MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5087LT1GOS; MMBT5087LT1GOS; MMBT5087LT1GOSTR

500
300
200
100
500
300
200
100
7.0
5.0
70
50
30
20
10
70
50
1.0
0.5
Figure 12. Current−Gain — Bandwidth Product
T
0.7 1.0
J
= 25°C
2.0
3.0
t
V
Figure 10. Turn−On Time
d
I
I
CE
C
C
@ V
, COLLECTOR CURRENT (mA)
2.0 3.0
, COLLECTOR CURRENT (mA)
= 20 V
5.0
BE(off)
7.0
= 0.5 V
5.0 V
5.0 7.0
10
TYPICAL DYNAMIC CHARACTERISTICS
20
10
t
r
30
V
I
T
C
20
CC
J
/I
= 25°C
B
50
= 3.0 V
= 10
http://onsemi.com
30
70
50
100
5
1000
700
500
300
200
100
7.0
5.0
3.0
2.0
1.0
70
50
30
20
10
10
0.05
-1.0
0.1
- 2.0
0.2
- 3.0
Figure 11. Turn−Off Time
V
I
Figure 13. Capacitance
C
R
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
- 5.0 - 7.0
0.5
1.0
-10
2.0
C
- 20
ib
t
t
s
f
5.0
- 30
10
V
I
I
T
C
B1
CC
J
T
/I
- 50 - 70 -100
= 25°C
B
J
= I
C
= 25°C
= - 3.0 V
= 10
20
B2
ob
50