MMBT5087LT1G ON Semiconductor, MMBT5087LT1G Datasheet - Page 4

• Manufacturer Part Number: MMBT5087LT1G
• Description: TRANS GP SS PNP LN 50V SOT23
• Manufacturer: ON Semiconductor
• Type: Low Noiser

Specifications of MMBT5087LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100µA, 5V
• Power - Max: 225mW
• Frequency - Transition: 40MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: - 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 40 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250 at 0.1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -50 mA
• Current, Gain: 250
• Frequency: 40 MHz
• Package Type: SOT-23
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -50 V
• Voltage, Collector To Base: -50 V
• Voltage, Collector To Emitter: -50 V
• Voltage, Collector To Emitter, Saturation: -0.3 V
• Voltage, Emitter To Base: -3 V
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 250
• Frequency (max): 40MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5087LT1GOS; MMBT5087LT1GOS; MMBT5087LT1GOSTR

1.0
0.8
0.6
0.4
0.2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.002
0
0
0.1
T
J
V
0.005 0.01 0.02 0.05 0.1 0.2
V
= 25°C
BE(sat)
CE(sat)
0.2
Figure 6. Collector Saturation Region
V
I
C
BE(on)
= 1.0 mA
@ I
@ I
0.5
C
C
/I
@ V
/I
Figure 8. “On” Voltages
I
B
B
C
= 10
, COLLECTOR CURRENT (mA)
= 10
CE
I
1.0
B
, BASE CURRENT (mA)
= 1.0 V
10 mA
2.0
5.0
0.5 1.0 2.0
50 mA
TYPICAL STATIC CHARACTERISTICS
10
20
100 mA
T
5.0 10
A
= 25°C
http://onsemi.com
50
100
20
4
100
1.6
0.8
0.8
1.6
2.4
80
60
40
20
0
0
0.1
0
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
*APPLIES for I
q
*q
0.2
VB
5.0
VC
T
V
for V
Figure 9. Temperature Coefficients
Figure 7. Collector Characteristics
A
300 mA
CE
for V
= 25°C
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
BE
0.5
CE(sat)
10
I
C
C
, COLLECTOR CURRENT (mA)
/I
B
1.0
≤ h
15
FE
/2
2.0
20
350 mA
5.0
25
10
25°C to 125°C
25°C to 125°C
I
B
- 55°C to 25°C
= 400 mA
30
- 55°C to 25°C
20
200 mA
250 mA
100 mA
150 mA
50 mA
35
50
100
40