BFN 24 E6327 Infineon Technologies, BFN 24 E6327 Datasheet - Page 4

• Manufacturer Part Number: BFN 24 E6327
• Description: TRANSISTOR RF NPN 250V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFN 24 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 360mW
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 70 MHz
• Collector- Emitter Voltage Vceo Max: 250 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFN24E6327XT; SP000014784

h
DC current gain h
V
Collector current I
V
C
FE
CE
CE
mA
10
10
10
10
10
10
10
10
10
5
5
5
= 10 V
= 10 V
5
2
5
2
5
2
3
2
1
0
-1
3
2
1
0
10
0
BFN 24/26
BFN 24/26
-1
5
10
0
0.5
FE
C
= ( V
5
=
10
( I
1
BE
C
)
)
1.0
5
10
V
C
2
BE
EHP00627
EHP00625
mA
V
10
1.5
3
4
Operating range I
T
Collector cutoff current I
V
C
CB0
A
CB
mA
10
10
10
10
10
= 25°C, D = 0
nA
10
10
10
10
10
10
5
5
5
= 200 V
5
5
5
5
3
2
1
0
-1
-1
4
3
2
1
0
10
BFN 24/26
0
BFN 24/26
0
5
10
50
C
1
=
( V
BFN24, BFN26
5
CBO
CEO
max
100
10
)
DC
=
2
2007-04-20
V
T
typ
A
CEO
( T
V
EHP00624
100
1
100
500
EHP00626
10
A
ms
˚C
5
)
ms
ms
s
s
10
150
3