BFN 24 E6327 Infineon Technologies, BFN 24 E6327 Datasheet - Page 5

• Manufacturer Part Number: BFN 24 E6327
• Description: TRANSISTOR RF NPN 250V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFN 24 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 360mW
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 70 MHz
• Collector- Emitter Voltage Vceo Max: 250 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFN24E6327XT; SP000014784

f
T
MHz
Transition frequency f
V
Total power dissipation P
10
10
10
CE
5
mW
3
2
1
10
400
300
250
200
150
100
BFN 24/26
= parameter in V, f = 2 GHz
50
0
0
0
15
5
30
10
45
1
60
T
75
5
=
90 105 120
tot
10
( I
= ( T
C
2
)
mA
C
EHP00622
S
)
T
°C
5
S
150
10
3
5
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
tot max
tot
totmax
DC
pF
90
70
60
50
40
30
20
10
10
10
10
10
0
5
5
5
0
/ P
10
3
2
1
0
BFN 24/26
-6
totDC
10
4
=
-5
10
( t
8
p
CEB
-4
)
D
=
10
t
T
p
12
BFN24, BFN26
-3
t
eb
p
10
16
cb
-2
2007-04-20
= ( V
T
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
= ( V
t
V
s
p
EHP00623
V
EB
CB
CCB
CB
)
(V
22
10
)
EB
0
)