BFN 39 H6327 Infineon Technologies, BFN 39 H6327 Datasheet - Page 2

• Manufacturer Part Number: BFN 39 H6327
• Description: TRANS RF PNP 300V SOT223
• Manufacturer: Infineon Technologies

Specifications of BFN 39 H6327

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 30mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
E
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
EB
CB
= 100 µA, I
= 1 mA, I
= 100 µA, I
= 1 mA, V
= 10 mA, V
= 30 mA, V
= 20 mA, I
= 20 mA, I
= 20 MHz, V
= 5 V, I
= 250 V, I
= 250 V, I
= 30 V, f = 1 MHz
B
C
CE
B
B
C
= 0
E
= 0
CE
CE
E
E
= 2 mA
= 2 mA
CE
= 0
= 0
1)
= 10 V
= 0
= 0 , T
= 10 V
= 10 V
= 10 V, f = 100 MHz
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
1)
2
f
C
Symbol
V
V
V
I
I
h
V
V
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
cb
min.
300
300
25
40
30
5
-
-
-
-
-
-
-
Values
typ.
100
2.5
-
-
-
-
-
-
-
-
-
-
-
max.
100
0.1
0.5
0.9
20
2007-03-29
-
-
-
-
-
-
-
-
BFN39
MHz
pF
Unit
V
µA
nA
-
V