MJD45H11G ON Semiconductor, MJD45H11G Datasheet

MJD45H11G

Manufacturer Part Number

MJD45H11G

Description

TRANS POWER PNP 8A 80V DPAK

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.MJD44H11T4G.pdf (8 pages)

2.MJD45H11G.pdf (5 pages)

Specifications of MJD45H11G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

1V @ 400mA, 8A

Current - Collector Cutoff (max)

1µA

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 4A, 1V

Power - Max

1.75W

Frequency - Transition

90MHz

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Transistor Polarity

PNP

Number Of Elements

Collector-emitter Voltage

80V

Emitter-base Voltage

Collector Current (dc) (max)

Dc Current Gain (min)

Power Dissipation

1.75W

Frequency (max)

90MHz

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

DPAK

Configuration

Single

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

80 V

Emitter- Base Voltage Vebo

5 V

Continuous Collector Current

8 A

Maximum Dc Collector Current

8 A

Maximum Operating Frequency

90 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

60 at 2 A at 1 V

Minimum Operating Temperature

- 55 C

Current, Collector

8 A

Current, Gain

Frequency

90 MHz

Polarity

PNP

Primary Type

Resistance, Thermal, Junction To Case

6.25 °C/W

Voltage, Breakdown, Collector To Emitter

80 V

Voltage, Collector To Emitter

80 V

Voltage, Collector To Emitter, Saturation

1 V

Voltage, Emitter To Base

5 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJD45H11G
MJD45H11GOS

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Current page: 1 of 8
Download datasheet (109Kb)

MJD44H11 (NPN)

MJD45H11 (PNP)

Complementary Power

Transistors

DPAK For Surface Mount Applications

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

January, 2011 − Rev. 10

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector−Emitter Voltage

Emitter−Base Voltage

Collector Current

Total Power Dissipation

Total Power Dissipation (Note 1)

Operating and Storage Junction

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

(Note 1)

Lead Temperature for Soldering

Designed for general purpose power and switching such as output or

(No Suffix)

Lead Formed for Surface Mount Application in Plastic Sleeves

Straight Lead Version in Plastic Sleeves (“−1” Suffix)

Electrically Similar to Popular D44H/D45H Series

Low Collector Emitter Saturation Voltage −

Fast Switching Speeds

Complementary Pairs Simplifies Designs

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings: Human Body Model, 3B u 8000 V

These are Pb−Free Packages

sizes recommended.

@ T

Derate above 25°C

@ T

Derate above 25°C

Temperature Range

= 25°C

CE(sat)

Characteristic

Rating

Machine Model, C u 400 V

− Continuous

− Peak

= 1.0 Volt Max @ 8.0 Amperes

Symbol

, T

CEO

qJC

qJA

stg

−55 to +150

0.014

Max

0.16

1.75

Max

6.25

71.4

260

W/°C

°C/W

Unit

Vdc

Adc

°C

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

1 2

POWER TRANSISTORS

80 VOLTS, 20 WATTS

J4xH11

ORDERING INFORMATION

http://onsemi.com

8 AMPERES

CASE 369C

CASE 369D

SILICON

STYLE 1

= Assembly Location

= Year

= Work Week

= Device Code

= Pb−Free Package

DPAK−3

DPAK

x = 4 or 5

Publication Order Number:

DIAGRAMS

MARKING

AYWW

xH11G

AYWW

xH11G

MJD44H11/D

Related parts for MJD45H11G

MJD45H11G Summary of contents

Page 1

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage ( mA Collector Cutoff Current (V = Rated CEO BE Emitter Cutoff Current ( Vdc ...

Page 3

D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0 500 0.5 ...

Page 4

I , COLLECTOR CURRENT (AMPS) C Figure 4. MJD44H11 DC Current Gain 1000 150°C 25°C 100 -40°C 10 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 6. MJD44H11 DC Current Gain ...

Page 5

1.1 1 -40°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0 COLLECTOR CURRENT (AMPS) C Figure 10. MJD44H11 Saturation Voltage V BE(sat) 1 ...

Page 6

... ORDERING INFORMATION Device MJD44H11G MJD44H11−1G MJD44H11RLG MJD44H11T4G MJD44H11T5G MJD45H11G MJD45H11−1G MJD45H11RLG MJD45H11T4 MJD45H11T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package Type Package DPAK 369C (Pb− ...

Page 7

... DETAIL 0.005 (0.13 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3.0 ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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