MJD45H11G ON Semiconductor, MJD45H11G Datasheet - Page 3

• Manufacturer Part Number: MJD45H11G
• Description: TRANS POWER PNP 8A 80V DPAK
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJD45H11G

• Transistor Type: PNP
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 1.75W
• Frequency - Transition: 90MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 8A
• Dc Current Gain (min): 60
• Power Dissipation: 1.75W
• Frequency (max): 90MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 8 A
• Maximum Dc Collector Current: 8 A
• Maximum Operating Frequency: 90 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 at 2 A at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 8 A
• Current, Gain: 40
• Frequency: 90 MHz
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 6.25 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD45H11G; MJD45H11GOS

0.05
0.02
0.5
0.3
0.1
20
10
5
3
2
1
0.07
0.05
0.03
0.02
0.01
0.7
0.5
0.3
0.2
0.1
1
1
0.01
SINGLE PULSE
0.02
0.05
D = 0.5
V
0.02 0.03 0.05
Figure 2. Maximum Forward Bias
CE
0.2
0.1
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
THERMAL LIMIT @ T
WIRE BOND LIMIT
3
Safe Operating Area
0.01
5
dc
7
0.1
5 ms
10
2.5
1.5
0.5
T
C
A
2
1
0
= 25°C
500 ms
T
25
20
15
10
0.2 0.3
5
0
C
25
20
30
100 ms
0.5
50
50
1 ms
Figure 1. Thermal Response
T
Figure 3. Power Derating
C
http://onsemi.com
SURFACE
70
MOUNT
1
T
T, TEMPERATURE (°C)
100
A
75
2
t, TIME (ms)
3
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC(t)
qJC
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
= 6.25°C/W MAX
- T
There are two limitations on the power handling ability of
The data of Figure 2 is based on T
= r(t) R
100
C
5
= P
qJC
(pk)
1
q
10
JC(t)
125
J(pk)
20
may be calculated from the data in
30
150
P
50
(pk)
DUTY CYCLE, D = t
t
1
100
t
2
J(pk)
200 300
= 150_C; T
1
/t
2
500
C
− V
J(pk)
C
1 k
CE
is