MJD45H11G ON Semiconductor, MJD45H11G Datasheet - Page 7

• Manufacturer Part Number: MJD45H11G
• Description: TRANS POWER PNP 8A 80V DPAK
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJD45H11G

• Transistor Type: PNP
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 1.75W
• Frequency - Transition: 90MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 8A
• Dc Current Gain (min): 60
• Power Dissipation: 1.75W
• Frequency (max): 90MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 8 A
• Maximum Dc Collector Current: 8 A
• Maximum Operating Frequency: 90 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 at 2 A at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 8 A
• Current, Gain: 40
• Frequency: 90 MHz
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 6.25 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD45H11G; MJD45H11GOS

L3
L4
b2
e
1
b3
4
2
E
3
b
A
D
0.005 (0.13)
B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
DETAIL A
C
0.228
5.80
c
L2
A
GAUGE
PLANE
SOLDERING FOOTPRINT*
PACKAGE DIMENSIONS
ROTATED 90 CW
0.244
6.20
c2
DETAIL A
H
C
http://onsemi.com
L
CASE 369C−01
L1
ISSUE D
DPAK
5
0.101
2.58
7
A1
0.118
3.0
H
0.063
1.6
SCALE 3:1
C
Z
SEATING
PLANE
6.172
0.243
inches
NOTES:
mm
1. DIMENSIONING AND TOLERANCING PER ASME
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
5. DIMENSIONS D AND E ARE DETERMINED AT THE
6. DATUMS A AND B ARE DETERMINED AT DATUM
Y14.5M, 1994.
MENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
OUTERMOST EXTREMES OF THE PLASTIC BODY.
PLANE H.
STYLE 1:
DIM
A1
b2
b3
L1
L2
L3
L4
c2
A
b
c
D
E
e
H
L
Z
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
0.086
0.000
0.025
0.030
0.180
0.018
0.018
0.235
0.250
0.370
0.055
0.035
0.155
MIN
−−−
0.090 BSC
0.108 REF
0.020 BSC
INCHES
0.094
0.005
0.035
0.045
0.215
0.024
0.024
0.245
0.265
0.410
0.070
0.050
0.040
MAX
−−−
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
9.40
1.40
0.89
3.93
−−−
2.29 BSC
2.74 REF
0.51 BSC
10.41
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
1.78
1.27
1.01
−−−