PBSS4350S,126 NXP Semiconductors, PBSS4350S,126 Datasheet

TRANS NPN 50V 3A LOW SAT TO92

PBSS4350S,126

Manufacturer Part Number
PBSS4350S,126
Description
TRANS NPN 50V 3A LOW SAT TO92
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4350S,126

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
290mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 2V
Power - Max
830mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934056901126
PBSS4350S AMO
PBSS4350S AMO
Product data sheet
Supersedes data of 2001 Nov 19
DATA SHEET
halfpage
PBSS4350S
50 V low V
M3D186
DISCRETE SEMICONDUCTORS
CEsat
NPN transistor
2004 Aug 20

Related parts for PBSS4350S,126

PBSS4350S,126 Summary of contents

Page 1

DATA SHEET halfpage M3D186 PBSS4350S 50 V low V Product data sheet Supersedes data of 2001 Nov 19 DISCRETE SEMICONDUCTORS NPN transistor CEsat 2004 Aug 20 ...

Page 2

... NXP Semiconductors 50 V low V NPN transistor CEsat FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • continuous current • High current switching • Improved device reliability due to reduced heat generation. APPLICATIONS • Medium power switching and muting • ...

Page 3

... NXP Semiconductors 50 V low V NPN transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th j-a ambient Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current V ...

Page 4

... NXP Semiconductors 50 V low V NPN transistor CEsat 600 handbook, halfpage h FE 500 (1) 400 (2) 300 200 (3) 100 0 − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values handbook, halfpage V CEsat (mV) ...

Page 5

... NXP Semiconductors 50 V low V NPN transistor CEsat 1200 handbook, halfpage I C (mA) 1000 800 600 400 200 0 0 0.4 0 °C. T amb ( 3.96 nA. ( 2. 3.63 nA. ( 2. 3.30 nA. ( 1. 2.97 nA. ( 1.65 nA Fig.6 Collector current as a function of collector-emitter voltage; typical values handbook, halfpage R CEsat (Ω) ...

Page 6

... NXP Semiconductors 50 V low V NPN transistor CEsat PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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