PBSS4350S,126 NXP Semiconductors, PBSS4350S,126 Datasheet - Page 3

TRANS NPN 50V 3A LOW SAT TO92

PBSS4350S,126

Manufacturer Part Number
PBSS4350S,126
Description
TRANS NPN 50V 3A LOW SAT TO92
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4350S,126

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
290mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 2V
Power - Max
830mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934056901126
PBSS4350S AMO
PBSS4350S AMO
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Aug 20
R
I
I
h
V
R
V
V
f
C
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
50 V low V
th j-a
CEsat
c
= 25 °C unless otherwise specified.
thermal resistance from junction to
ambient
collector-base cut-off current V
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage V
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
PARAMETER
NPN transistor
V
V
V
V
V
I
I
I
I
I
I
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 2 A; I
= 100 mA; V
= 5 V; I
= 50 V; I
= 50 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
in free air; note 1
B
B
B
B
= 50 mA
= 200 mA; note 1
= 200 mA; note 1
= 200 mA; note 1
C
C
C
C
C
E
E
E
CONDITIONS
= 0
= 500 mA
= 1 A; note 1
= 2 A; note 1
= 1 A; note 1
B
= 0
= 0; T
= I
CE
3
= 50 mA
e
CONDITIONS
= 5 V; f = 100 MHz
= 0; f = 1 MHz
j
= 150 °C
200
200
100
100
MIN.
VALUE
150
110
TYP.
PBSS4350S
Product data sheet
100
50
100
90
170
290
<145
1.2
1.1
30
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
V
V
MHz
pF
UNIT

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