PDTD123YT,215 NXP Semiconductors, PDTD123YT,215 Datasheet - Page 4

• Manufacturer Part Number: PDTD123YT,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTD123YT,215

• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.219
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058982215::PDTD123YT T/R::PDTD123YT T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PDTD123Y_SER_2
Product data sheet
Table 7.
[1]
Table 8.
T
Symbol
R
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25
°
C unless otherwise specified.
Parameter
thermal resistance from
junction to ambient
Thermal characteristics
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
SOT346
SOT54
SOT23
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 02 — 16 November 2009
Conditions
V
V
V
V
V
I
V
f = 1 MHz
C
CB
CB
CE
EB
CE
CE
CE
CB
Conditions
in free air
= 50 mA; I
= 5 V; I
= 40 V; I
= 50 V; I
= 50 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
C
C
C
B
E
E
B
E
= 0 A
= 50 mA
= 100 μA
C
= 0 A
= 0 A
= 0 A
= 2.5 mA
= i
= 20 mA
e
= 0 A;
PDTD123Y series
[1]
Min
-
-
-
Min
-
-
-
-
70
-
0.4
0.5
1.54
4.1
-
Typ
-
-
-
Typ
-
-
-
-
-
-
0.6
1
2.2
4.55
7
© NXP B.V. 2009. All rights reserved.
Max
500
250
500
Max
100
100
0.5
0.65
-
0.3
1
1.4
2.86
5
-
Unit
K/W
K/W
K/W
Unit
nA
nA
μA
mA
V
V
V
kΩ
pF
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