PDTD123YT,215 NXP Semiconductors, PDTD123YT,215 Datasheet - Page 5

• Manufacturer Part Number: PDTD123YT,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTD123YT,215

• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.219
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058982215::PDTD123YT T/R::PDTD123YT T/R

NXP Semiconductors
PDTD123Y_SER_2
Product data sheet
Fig 1.
Fig 3.
V
h
(V)
I(on)
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
FE
10
10
10
10
−1
3
2
1
1
10
10
V
DC current gain as a function of collector
current; typical values
V
On-state input voltage as a function of
collector current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= 5 V
= 0.3 V
= 100 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
1
1
(1)
(2)
(3)
10
10
10
10
2
2
I
I
006aaa322
C
006aaa324
C
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
(mA)
(mA)
Rev. 02 — 16 November 2009
(1)
(2)
(3)
10
10
3
3
Fig 2.
Fig 4.
V
V
CEsat
(V)
(V)
I(off)
10
10
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
10
−1
−2
−1
1
10
1
I
Collector-emitter saturation voltage as a
function of collector current; typical values
V
Off-state input voltage as a function of
collector current; typical values
C
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 20
= 100 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
PDTD123Y series
(1)
(2)
(3)
10
1
(1)
(2)
(3)
I
I
C
C
(mA)
(mA)
© NXP B.V. 2009. All rights reserved.
006aaa323
006aaa325
10
10
2
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