BCR 108L3 E6327 Infineon Technologies, BCR 108L3 E6327 Datasheet - Page 8

• Manufacturer Part Number: BCR 108L3 E6327
• Description: TRANSISTOR NPN DGTL TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 108L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 170MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR108L3E6327XT; SP000014758

Permissible Puls Load R
BCR108S
Permissible Puls Load R
BCR108T
K/W
K/W
10
10
10
10
10
10
10
10
10
10
-1
-1
3
2
1
0
3
2
1
0
10
10
-6
-6
10
10
-5
-5
10
10
-4
-4
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
10
-3
-3
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
10
10
=
=
-2
-2
(t
(t
p
p
s
s
)
)
t
t
p
p
10
10
0
0
8
Permissible Pulse Load
P
BCR108S
Permissible Pulse Load
P
BCR108T
totmax
totmax
10
10
10
10
10
10
10
10
-
3
2
1
0
3
2
1
0
10
10
/P
/P
-6
-6
totDC
totDC
10
10
-5
-5
=
=
10
10
(t
(t
p
p
-4
-4
)
)
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
-3
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
BCR108...
-2
-2
2006-05-04
s
s
t
t
p
p
10
10
0
0