BCR 112L3 E6327 Infineon Technologies, BCR 112L3 E6327 Datasheet
BCR 112L3 E6327
Specifications of BCR 112L3 E6327
SP000014852
Related parts for BCR 112L3 E6327
BCR 112L3 E6327 Summary of contents
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NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4. For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR112/F/L3 BCR112U BCR112T ...
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Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipation- BCR112, T 102°C S BCR112F, T 128°C S BCR112L3, T 135°C S BCR112T, T 109°C S BCR112U, T 118°C S BCR112W, T 124°C ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector-base cutoff current ...
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DC current gain (common emitter configuration Input on Voltage (on) ...
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Total power dissipation P BCR112 300 mW 200 150 100 Total power dissipation P BCR112L3 300 mW 200 150 100 Total power dissipation ...
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Total power dissipation P BCR112U 300 mW 200 150 100 Permissible Pulse Load R BCR112 0.5 0.2 0.1 0.05 0. 0.01 0.005 D = ...
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Permissible Puls Load R thJS BCR112F 2 10 K/W D=0 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Puls Load R thJS BCR112L3 ...
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Permissible Puls Load R thJS BCR112T D=0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS BCR112U 3 ...
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Permissible Puls Load R thJS BCR112W 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Pulse ...