BCR 112L3 E6327 Infineon Technologies, BCR 112L3 E6327 Datasheet - Page 6

• Manufacturer Part Number: BCR 112L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 112L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 140MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR112L3E6327XT; SP000014852

Total power dissipation P
BCR112U
Permissible Pulse Load R
BCR112
K/W
mW
10
10
10
10
10
300
200
150
100
50
-1
0
3
2
1
0
10
0
-6
20
10
-5
40
10
-4
60
10
80
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
tot
thJS
100
10
= (T
-2
=
120 °C
S
(t
s
)
T
t
p
p
S
)
150
10
0
6
Total power dissipation P
BCR112W
Permissible Pulse Load
P
BCR112
totmax
mW
300
200
150
100
10
10
10
10
50
-
0
3
2
1
0
10
0
/P
-6
totDC
20
10
-5
=
40
10
(t
p
-4
60
)
10
80
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot
100
10
= (T
Aug-29-2003
BCR112...
-2
120 °C
S
s
)
T
t
p
S
150
10
0