UMF32NTR Rohm Semiconductor, UMF32NTR Datasheet - Page 2

• Manufacturer Part Number: UMF32NTR
• Description: TRANS PNP DUAL 50V UMT6
• Manufacturer: Rohm Semiconductor

Specifications of UMF32NTR

• Transistor Type: PNP Pre-Biased, N-Channel
• Applications: General Purpose
• Voltage - Rated: 50V PNP, 30V N Channel
• Current Rating: 100mA PNP, 100mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: PNP + N MOSFET
• Collector Emitter Voltage V(br)ceo: -50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute maximum ratings (Ta=25C)
Tr1
Tr2
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25C)
Tr1
Tr2
∗1 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
○
EMF32 / UMF32N
∗ Transition frequency of the device
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source
c
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation
Channel temperature
Range of storage temperature
Gate-threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
www.rohm.com
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
2010 ROHM Co., Ltd. All rights reserved.
on-state resistance
Parameter
Parameter
Parameter
Parameter
Continuous
Continuous
Pulsed
Pulsed
Symbol
Symbol
V
V
V
V
Tstg
V
Tstg
I
Tch
P
I
I
P
DRP
Tj
CBO
CEO
EBO
I
DSS
GSS
I
DR
Symbol
DP
V
BV
BV
BV
C
D
C
D
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
EBO
T
1
Symbol
V
150(TOTAL)
150(TOTAL)
−55 to +150
−55 to +150
R
V
(BR)DSS
t
t
I
I
|Y
C
C
C
DS(on)
GS(th)
d(on)
d(off)
GSS
DSS
Min.
3.29
t
t
−50
−50
100
oss
Limits
Limits
rss
iss
r
−5
fs
f
−100
−
−
−
−
−50
−50
150
±20
100
200
100
200
150
|
−5
30
Typ.
250
250
4.7
−
−
−
−
−
−
Min.
0.8
30
20
−
−
−
−
−
−
−
−
−
−
−
Unit
mW
Unit
mW
Max.
mA
mA
mA
mA
mA
−0.5
−0.5
−0.3
6.11
600
°C
°C
°C
°C
V
V
V
V
V
−
−
−
−
∗1
∗1
∗1
∗2
Typ.
13
15
35
80
80
−
−
−
−
5
7
−
9
4
MHz
Unit
μA
μA
kΩ
V
V
V
V
−
2/4
Max.
I
I
I
V
V
I
I
V
C
C
E
C
C
1.0
1.5
±1
13
= −50μA
CB
EB
CE
−
8
−
−
−
−
−
−
−
−
= −50μA
= −1mA
/I
= −1mA, V
B
= −50V
= −4V
= −10V, I
= −5mA/ −0.25mA
Unit
μA
μA
ms
pF
pF
pF
ns
ns
Conditions
ns
ns
Ω
Ω
V
V
CE
E
=5mA, f=100MHz
= −5V
−
V
I
V
V
I
I
V
V
I
V
R
D
D
D
D
GS
DS
DS
DS
DS
GS
=10μA, V
=10mA, V
=1mA, V
=10mA, V
GS
=±20V, V
=30V, V
=3V, I
=3V, I
=5V, V
=5V, R
=10Ω
D
D
GS
GS
=100μA
=10mA
L
GS
Conditions
=500Ω,
GS
GS
DD
=2.5V
=0V, f=1MHz
DS
=0V
=0V
=4V
∗
=0V
5V,
2010.09 - Rev.A
Data Sheet