UMF32NTR Rohm Semiconductor, UMF32NTR Datasheet

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UMF32NTR

Manufacturer Part Number
UMF32NTR
Description
TRANS PNP DUAL 50V UMT6
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of UMF32NTR

Transistor Type
PNP Pre-Biased, N-Channel
Applications
General Purpose
Voltage - Rated
50V PNP, 30V N Channel
Current Rating
100mA PNP, 100mA N-Channel
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
PNP + N MOSFET
Collector Emitter Voltage V(br)ceo
-50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
-100mA
Operating
RoHS Compliant
Dc Current Gain Hfe
250
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
Power management (dual transistors)
EMF32 / UMF32N
DTA143T and 2SK3019 are housed independently in a EMT6 package.
Power management circuit
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Silicon epitaxial planar transistor
Basic ordering unit (pieces)
Application
Features
Structure
Equivalent circuits
Packaging specifications
Tr2
(3)
(4)
Package
Marking
Code
Type
(5)
(2)
(6)
(1)
Tr1
EMF32
EMT6
8000
T2R
F32
UMF32
UMT6
3000
F32
TR
External dimensions (Unit : mm)
ROHM : EMT6
ROHM : UMT6
0.1Min.
Abbreviated symbol : F32
Abbreviated symbol : F32
1.25
( 4 )
( 5 )
( 6 )
2.1
1.2
1.6
EMF32 / UMF32N
1pin mark
Each lead has
Each lead has
( 3 )
( 2 )
( 1 )
same dimensions
same dimensions
1/4

Related parts for UMF32NTR

UMF32NTR Summary of contents

Page 1

Transistors Power management (dual transistors) EMF32 / UMF32N DTA143T and 2SK3019 are housed independently in a EMT6 package. Application Power management circuit Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in ...

Page 2

Transistors Absolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO V Emitter-base voltage EBO Collector current I C Power dissipation P C Junction temperature Tj Range of storage temperature Tstg ∗1 120mW per element ...

Page 3

Transistors Electrical characteristic curves Tr1 1k =− 500 200 Ta=100°C 100 25°C −40° −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m (A) COLLECTOR CURRENT : I C Fig.1 DC current ...

Page 4

Transistors 9 = Pulsed 8 7 =100mA =50mA −50 − 100 125 CHANNEL TEMPERATURE : Tch (°C) Fig.9 Static drain-source on-state resistance vs. ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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