EMF6T2R Rohm Semiconductor, EMF6T2R Datasheet - Page 2

• Manufacturer Part Number: EMF6T2R
• Description: TRANS PNP BIP+MOS EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMF6T2R

• Transistor Type: PNP, N-Channel
• Applications: General Purpose
• Voltage - Rated: 12V PNP, 30V N Channel
• Current Rating: 500mA PNP, 100mA N Channel
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Tr1
Tr2
Tr1
Tr2
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
∗1 Single pulse P
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation
Channel temperature
Range of storage temperature
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
Forward transfer admittance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Turn-off delay time
Fall time
Transition frequency
Input capacitance
Rise time
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
on-state resistance
Parameter
Parameter
W
Parameter
Parameter
=1ms
Continuous
Continuous
Pulsed
Pulsed
Symbol
Symbol
V
V
V
V
Tstg
V
Tstg
I
Tch
I
I
P
I
DRP
P
Tj
CBO
CEO
EBO
I
DSS
GSS
I
DR
CP
DP
C
D
C
D
Symbol
V
Symbol
V
BV
BV
BV
R
V
150(TOTAL)
150(TOTAL)
(BR)DSS
−55
−55
Cob
t
t
I
I
I
|Y
C
CE(sat)
I
C
C
h
GS(th)
DS(on)
d(on)
d(off)
CBO
EBO
GSS
DSS
f
t
t
FE
oss
CEO
CBO
EBO
T
rss
iss
fs
r
f
Limits
Limits
−500
|
−1.0
−15
−12
150
±20
100
200
100
200
150
to
to
−6
30
+150
+150
Min.
Min.
−12
−15
270
0.8
−6
30
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
mW
Unit
mW
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
A
V
V
−100
Typ.
Typ.
260
∗1
∗2
∗1
∗1
∗2
6.5
13
15
35
80
80
−
−
−
−
−
−
−
−
−
−
5
7
−
9
4
Max.
−100
−100
−250
Max.
680
1.0
1.5
±1
13
−
−
−
−
−
−
8
−
−
−
−
−
−
−
−
MHz
Unit
Unit
mV
nA
nA
pF
µA
µA
ms
pF
pF
pF
ns
ns
ns
ns
V
V
V
−
V
Ω
Ω
V
I
I
I
V
V
I
V
V
V
V
I
V
V
I
I
V
V
I
V
R
C
C
E
C
D
D
D
D
CB
EB
CE
CE
CB
=−10µA
GS
DS
DS
DS
DS
GS
=−1mA
=−10µA
=−200mA, I
GS
=10µA, V
=10mA, V
=1mA, V
=10mA, V
=−15V
=−6V
=−2V, I
=−2V, I
=−10V, I
=30V, V
=3V, I
=3V, I
=5V, V
=±20V, V
=5V, R
=10Ω
D
D
GS
GS
C
E
=100µA
=10mA
L
Conditions
GS
Conditions
=10mA, f=100MHz
=500Ω,
=−10mA
GS
GS
DD
E
=2.5V
=0V, f=1MHz
=0mA, f=1MHz
DS
B
=0V
=0V
=4V
=−10mA
=0V
5V,
Rev.A
EMF6
2/5