EMF6T2R Rohm Semiconductor, EMF6T2R Datasheet - Page 3

• Manufacturer Part Number: EMF6T2R
• Description: TRANS PNP BIP+MOS EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMF6T2R

• Transistor Type: PNP, N-Channel
• Applications: General Purpose
• Voltage - Rated: 12V PNP, 30V N Channel
• Current Rating: 500mA PNP, 100mA N Channel
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Tr1
Fig.4 Collector-emitter saturation voltage
Electrical characteristic curves
1000
Fig.1 Grounded emitter propagation
1000
100
100
10
10
1
1000
1
100
0
1
Fig.7 Collector output capacitance
10
vs. collector current ( ΙΙ )
0.1
1
BASE TO EMITTER VOLTAGE : V
V
Pulsed
I
Pulsed
C
characteristics
CE
/I
0.2
EMITTER TO BASE VOLTAGE : V
=2V
B
COLLECTOR CURRENT : I
=20
Emitter input capacitance
vs. emitter-base voltage
vs. collector-base voltage
0.4
10
Ta=25°C
1
0.6
Ta=−40°C
Ta=125°C
0.8
Cib
100
1.0
10
Cob
C
(mA)
1.2
Ta = 25°C
I
f = 1MHz
BE
E
= 0A
(V)
EB
1.4
1000
( V)
100
1000
10000
100
1000
10
100
Fig.5 Base-emitter saturation voltage
1
10
1
1
COLLECTOR CURRENT : I
Fig.2 DC current gain vs.
vs. collector current
COLLECTOR CURRENT : I
Ta=25°C
Ta=125°C
Ta=−40°C
collector current
10
10
Ta=25°C
Ta=125°C
100
100
Ta=−40°C
C
C
(mA)
(mA)
V
Pulsed
I
Pulsed
C
CE
/I
B
=2V
=20
1000
1000
Fig.3 Collector-emitter saturation voltage
1000
100
1000
10
100
1
10
1
1
vs. collector current ( Ι )
1
Ta=25°C
Pulsed
I
V
Ta=25°C
Pulsed
C
Fig.6 Gain bandwidth product
/I
CE
B
COLLECTOR CURRENT : I
=10
I
C
=2V
/I
B
EMITTER CURRENT : I
I
C
=20
/I
B
vs. emitter current
=50
10
10
Rev.A
100
100
E
C
(mA)
EMF6
(mA)
3/5
1000
1000