NUS5531MTR2G ON Semiconductor, NUS5531MTR2G Datasheet - Page 8

• Manufacturer Part Number: NUS5531MTR2G
• Description: MOSFET/BJT SGL P-CH 12V 8-WDFN
• Manufacturer: ON Semiconductor

Specifications of NUS5531MTR2G

• Transistor Type: PNP, P-Channel
• Applications: General Purpose
• Voltage - Rated: 20V PNP, 12V P-Channel
• Current Rating: 2A PNP, 5.47A P-Channel
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

600
550
500
450
400
350
300
250
200
150
100
0.25
0.15
0.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0.001
0.001
0
Figure 15. Collector Emitter Saturation Voltage
0.001
150°C (5.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
Figure 19. Base Emitter Turn−On Voltage vs.
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
V
Figure 17. DC Current Gain vs. Collector
IC/IB = 10
CE
= −2.0 V
0.01
I
C
0.01
I
0.01
I
, COLLECTOR CURRENT (A)
C
C
, COLLECTOR CURRENT (A)
vs. Collector Current
, COLLECTOR CURRENT (A)
Collector Current
150°C
−55°C
25°C
Current
0.1
0.1
0.1
TYPICAL CHARACTERISTICS − BJT
25°C
1.0
1.0
1.0
150°C
http://onsemi.com
−55°C
10
10
10
8
0.35
0.25
0.15
0.05
0.3
0.2
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.001
0.001
0
0
0.01
Figure 16. Collector Emitter Saturation Voltage
Figure 18. Base Emitter Saturation Voltage vs.
IC/IB = 10
IC/IB = 100
10 mA
100 mA
−55°C
150°C
Figure 20. Saturation Region
25°C
0.01
0.01
I
I
C
C
0.1
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
I
vs. Collector Current
B
, BASE CURRENT (mA)
Collector Current
0.1
0.1
1.0
I
C
150°C
= 500 mA
300 mA
−55°C
1.0
1.0
10
25°C
100
10
10