BTA2008-600D,412 NXP Semiconductors, BTA2008-600D,412 Datasheet - Page 4

• Manufacturer Part Number: BTA2008-600D,412
• Description: TRIAC 600V 80MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BTA2008-600D,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 10mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Current - On State (it (rms)) (max): 800mA
• Voltage - Gate Trigger (vgt) (max): 2V
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 9.9 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.35 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061106412; BTA2008-600D; BTA2008-600D

NXP Semiconductors
BTA2008_SER_D_E_1
Product data sheet
Fig 3.
Fig 4.
I
T(RMS)
I
(A)
TSM
(A)
(1) dI
10
10
10
12
10
3
2
8
6
4
2
0
10
10
t
Non-repetitive peak on-state current as a function of pulse duration; maximum values
f = 50 Hz
T
RMS on-state current as a function of surge
duration; maximum values
p
-5
-2
lead
T
/dt limit
20 ms
= 70 C
(1)
10
-1
10
-4
1
surge duration (s)
003aac117
Rev. 01 — 18 January 2008
10
10
-3
Fig 5.
I
T(RMS)
BTA2008 series D and E
(A)
0.8 A Three-quadrant triacs high commutation
0.8
0.6
0.4
0.2
1
0
-50
RMS on-state current as a function of lead
temperature; maximum values
0
10
-2
50
I
T
T
j(init)
= 25 C max
100
t
t
p
p
© NXP B.V. 2008. All rights reserved.
(s)
T
003aac119
003aac115
lead
I
TSM
( C)
t
10
150
-1
4 of 12