BB 555 H7912 Infineon Technologies, BB 555 H7912 Datasheet - Page 2
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BB 555 H7912
Manufacturer Part Number
BB 555 H7912
Description
DIODE VAR CAP 30V 20MA SCD80
Manufacturer
Infineon Technologies
Datasheet
1.BB_535_E7904.pdf
(9 pages)
Specifications of BB 555 H7912
Capacitance @ Vr, F
2.3pF @ 28V, 1MHz
Capacitance Ratio
9.8
Capacitance Ratio Condition
C1/C28
Voltage - Peak Reverse (max)
30V
Diode Type
Single
Mounting Type
Surface Mount
Package / Case
SCD 80
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Q @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BB555H7912XT
1
Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
V
AC Characteristics
Diode capacitance
V
V
V
V
Capacitance ratio
V
Capacitance ratio
V
Capacitance matching
V
BB535
V
BB555/-02V
V
BB555/-02V
Series resistance
V
For details please refer to Application Note 047
R
R
R
R
R
R
R
R
R
R
R
R
= 30 V
= 30 V, T
= 1 V, f = 1 MHz
= 2 V, f = 1 MHz
= 25 V, f = 1 MHz
= 28 V, f = 1 MHz
= 1 V, V
= 2 V, V
= 1V to 28V, f = 1 MHz, 7 diodes sequence,
= 1V to 28V, f = 1 MHz, 4 diodes sequence,
= 1V to 28V, f = 1 MHz, 7 diodes sequence,
= 3 V, f = 470 MHz
R
R
A
= 28 V, f = 1 MHz
= 25 V, f = 1 MHz
= 85 °C
1)
A
= 25°C, unless otherwise specified
2
Symbol
I
C
C
C
r
R
S
C
T
T1
T2
T
/ C
/ C
/ C
T28
T25
T
14.01
min.
17.5
2.05
1.9
8.2
-
-
6
-
-
-
-
Values
18.7
2.24
0.15
0.25
0.58
typ.
BB535/BB555...
8.9
6.7
2.1
15
-
-
-
max.
200
16.1
0.75
2007-04-20
10
9.8
7.5
2.5
2.4
2.3
20
1
2
Unit
nA
pF
-
%