BB 555 H7912 Infineon Technologies, BB 555 H7912 Datasheet - Page 3

• Manufacturer Part Number: BB 555 H7912
• Description: DIODE VAR CAP 30V 20MA SCD80
• Manufacturer: Infineon Technologies

Specifications of BB 555 H7912

• Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
• Capacitance Ratio: 9.8
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (max): 30V
• Diode Type: Single
• Mounting Type: Surface Mount
• Package / Case: SCD 80
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Q @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BB555H7912XT

Diode capacitance C
f = 1MHz
Temperature coefficient of the diode
capacitance T
1/°C
pF
10
10
10
20
16
14
12
10
8
6
4
2
0
-3
-4
-5
0
10
0
5
Cc
10
= ( V
T
15
= (V
10
R
)
1
20
R
)
V
V
V
V
R
R
30
10
2
3
Normalized diode capacitance
C
V
Reverse current I
V
R
R
(TA)
= Parameter
= 28 V
1.08
1.04
1.02
0.98
0.96
10
pA
10
10
10
-
/ C
1
-30
-10
3
2
1
0
(25°C)
-10
10
= ( T
10
A
R
30
); f = 1MHz
= ( T
30
BB535/BB555...
50
50
A
)
70
70
2007-04-20
25V
1V
2V
°C
°C
T
T
A
A
110
100