IRLML2246TRPBF International Rectifier, IRLML2246TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLML2246TRPBF
• Description: MOSFET P-CH 20V 2.6A SOT23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2246TRPBF

• Input Capacitance (ciss) @ Vds: 220pF @ 16V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 2.9nc @ 4.5V
• Power - Max: 1.3W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 0.09ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 135 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 2.6 A
• Power Dissipation: 1.3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML2246TRPBFTR

IRLML2246TRPbF
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Electric Characteristics @ T
Source - Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
SD
g
gs
gd
rr
Symbol
Symbol
(BR)DSS
2
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
™
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
3.4
0.52
–––
157
–––
–––
–––
–––
–––
–––
220
–––
–––
–––
9.5
2.9
1.2
5.3
7.7
6.2
90
16
26
16
70
48
17
-150
-100
-1.1
-1.0
-1.3
-1.2
–––
–––
135
236
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-11
9.3
26
mV/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0KHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
G
= -2.6A
= -1.0A
= 25°C, I
= 25°C, V
= 6.8Ω
= V
= -16V, V
= -16V, V
= -10V, I
=-10V
= -16V
= 0V, I
= -4.5V, I
= -2.5V, I
= 12V
= -12V
= -4.5V
=-10V
= -4.5V
= 0V
GS
, I
Conditions
Conditions
d
D
S
D
d
R
= -250µA
D
= -2.6A, V
= -10µA
D
D
GS
GS
= -15V, I
= -2.6A
= -2.6A
= -2.1A
d
= 0V
= 0V, T
www.irf.com
D
G
= -1mA
F
d
d
GS
=-2.6A
J
= 125°C
= 0V
D
S
d