IRLML2246TRPBF International Rectifier, IRLML2246TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLML2246TRPBF
• Description: MOSFET P-CH 20V 2.6A SOT23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2246TRPBF

• Input Capacitance (ciss) @ Vds: 220pF @ 16V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 2.9nc @ 4.5V
• Power - Max: 1.3W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 0.09ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 135 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 2.6 A
• Power Dissipation: 1.3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML2246TRPBFTR

IRLML2246TRPbF
Id
6
Vgs
300
250
200
150
100
Fig 12. Typical On-Resistance vs.
50
Fig 14a. Basic Gate Charge Waveform
1
2
T J = 25°C
-V GS, Gate -to -Source Voltage (V)
Qgodr
3
Gate Voltage
4
5
Qgd
6
7
T J = 125°C
Qgs2
8
Vgs(th)
9
I D = -2.6A
Vds
Qgs1
10 11 12
0
1200
1000
800
600
400
200
0
Fig 13. Typical On-Resistance vs.
Fig 14b. Gate Charge Test Circuit
0
20K
1K
Vgs = -2.5V
2
4
Drain Current
-I D , Drain Current (A)
S
S
6
DUT
8
Vgs = -4.5V
L
10
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12
14
VCC
16