IRLML2246TRPBF International Rectifier, IRLML2246TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML2246TRPBF
• Description: MOSFET P-CH 20V 2.6A SOT23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2246TRPBF

• Input Capacitance (ciss) @ Vds: 220pF @ 16V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 2.9nc @ 4.5V
• Power - Max: 1.3W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 0.09ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 135 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 2.6 A
• Power Dissipation: 1.3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML2246TRPBFTR

IRLML2246TRPbF
10000
4
1000
100
0.1
100
10
10
1
Fig 7. Typical Source-Drain Diode
0.2
1
Fig 5. Typical Capacitance vs.
C rss
C oss
C iss
Drain-to-Source Voltage
T J = 150°C
-V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
0.4
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.6
f = 1 MHZ
10
0.8
T J = 25°C
V GS = 0V
1.0
1.2
100
100
0.1
14.0
12.0
10.0
10
8.0
6.0
4.0
2.0
0.0
1
0.10
Fig 8. Maximum Safe Operating Area
0
T A = 25°C
Tj = 150°C
Single Pulse
I D = -2.6A
Fig 6. Typical Gate Charge vs.
-V DS , Drain-to-Source Voltage (V)
1
Gate-to-Source Voltage
V DS = -16V
V DS = -10V
V DS = -4.0V
Q G , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
2
1.0
3
1msec
4
10
5
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6
100µsec
7
100
8