NTMFS4825NFET1G ON Semiconductor, NTMFS4825NFET1G Datasheet - Page 3

• Manufacturer Part Number: NTMFS4825NFET1G
• Description: MOSFET N-CH 30V 171A SO-8FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4825NFET1G

• Input Capacitance (ciss) @ Vds: 5660pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 40.2nC @ 4.5V
• Power - Max: 950mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Forward Transconductance Gfs (max / Min): 90 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.74 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Fall Time: 13 ns
• Gate Charge Qg: 40.2 nC
• Rise Time: 24 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise specified)
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
G
http://onsemi.com
V
3
V
GS
I
V
S
GS
I
GS
D
= 2.0 A
= 0 V, dI
= 15 A, R
= 0 V,
Test Condition
= 10 V, V
T
I
S
A
= 23 A
= 25°C
S
/dt = 100 A/ms,
G
DS
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
Min
15.7
21.2
44.6
14.5
0.35
0.26
39.1
20.1
0.66
0.20
Typ
1.5
0.7
19
34
Max
0.70
2.0
Unit
nH
ns
ns
nC
W
V