NTMFS4825NFET1G ON Semiconductor, NTMFS4825NFET1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS4825NFET1G
• Description: MOSFET N-CH 30V 171A SO-8FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4825NFET1G

• Input Capacitance (ciss) @ Vds: 5660pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 40.2nC @ 4.5V
• Power - Max: 950mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Forward Transconductance Gfs (max / Min): 90 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.74 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Fall Time: 13 ns
• Gate Charge Qg: 40.2 nC
• Rise Time: 24 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.010
0.008
0.006
0.004
0.002
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
−50
0
0
0
2
I
V
D
GS
Figure 3. On−Resistance vs. Gate−to−Source
= 20 A
−25
= 10 V
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
3
V
DS
T
V
1
J
GS
, JUNCTION TEMPERATURE (°C)
, DRAIN−TO−SOURCE VOLTAGE (V)
0
, GATE−TO−SOURCE VOLTAGE (V)
4
4.2 V thru 10 V
25
5
2
Temperature
Voltage
T
50
J
6
= 25°C
75
3
7
TYPICAL PERFORMANCE CURVES
100
8
V
4
GS
I
T
D
125
J
= 20 A
= 4.0 V
= 25°C
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3.8 V
9
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
150
10
5
4
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
0.0005
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
5
1
10
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
GS
T
V
30
J
DS
1.5
= 25°C
= 0 V
V
V
= 10 V
Figure 2. Transfer Characteristics
DS
GS
10
50
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
2
T
J
I
70
T
D
= 125°C
J
, DRAIN CURRENT (A)
= 25°C
2.5
Gate Voltage
15
90
vs. Voltage
T
T
J
T
J
= 150°C
V
J
V
= 125°C
GS
110
= 25°C
GS
3
= 4.5 V
= 10 V
T
J
130
20
= −55°C
3.5
150
4
170
25
4.5
190
210
30
5