NTMFS4825NFET1G ON Semiconductor, NTMFS4825NFET1G Datasheet - Page 5
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NTMFS4825NFET1G
Manufacturer Part Number
NTMFS4825NFET1G
Description
MOSFET N-CH 30V 171A SO-8FL
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.NTMFS4825NFET3G.pdf
(6 pages)
Specifications of NTMFS4825NFET1G
Input Capacitance (ciss) @ Vds
5660pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
40.2nC @ 4.5V
Power - Max
950mW
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.3 mOhms
Forward Transconductance Gfs (max / Min)
90 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
29 A
Power Dissipation
2.74 W
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Fall Time
13 ns
Gate Charge Qg
40.2 nC
Rise Time
24 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTMFS4825NFET1G
Manufacturer:
ON Semiconductor
Quantity:
195
Part Number:
NTMFS4825NFET1G
Manufacturer:
ON/安森美
Quantity:
20 000
1000
1000
0.01
100
100
8000
7000
6000
5000
4000
3000
2000
1000
0.1
10
10
1
1
0
1
0.1
0
V
Single Pulse
T
V
I
V
C
Figure 11. Maximum Rated Forward Biased
D
GS
C
DD
GS
= 25°C
= 15 A
rss
= 20 V
= 15 V
= 10 V
V
Figure 9. Resistive Switching Time
4
DS
V
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
R
G
8
Safe Operating Area
, GATE RESISTANCE (W)
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
12
10
16
V
GS
= 0 V
10
TYPICAL PERFORMANCE CURVES
20
T
24
J
100 ms
10 ms
= 25°C
1 ms
10 ms
dc
http://onsemi.com
t
t
t
t
d(off)
f
r
d(on)
C
C
oss
28
iss
100
100
5
400
350
300
250
200
150
100
10
11
30
25
20
15
10
50
9
8
7
6
5
4
3
2
1
0
5
0
0
0
Figure 8. Gate−to−Source and Drain−to−Source
0.1
25
Figure 10. Diode Forward Voltage vs. Current
T
Figure 12. Maximum Avalanche Energy vs.
V
Q
J
GS
T
gs
10
= 25°C
J
0.2
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
SD
Starting Junction Temperature
50
Q
20
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
G
Voltage vs. Total Charge
, TOTAL GATE CHARGE (nC)
gd
0.3
30
75
0.4
Q
40
T
0.5
50
100
60
0.6
I
T
V
V
D
J
DD
GS
I
125
D
= 30 A
= 25°C
70
= 50 A
= 15 V
= 30 A
0.7
80
150
0.8