NTMFS4825NFET1G ON Semiconductor, NTMFS4825NFET1G Datasheet - Page 5

• Manufacturer Part Number: NTMFS4825NFET1G
• Description: MOSFET N-CH 30V 171A SO-8FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4825NFET1G

• Input Capacitance (ciss) @ Vds: 5660pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 40.2nC @ 4.5V
• Power - Max: 950mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 mOhms
• Forward Transconductance Gfs (max / Min): 90 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.74 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Fall Time: 13 ns
• Gate Charge Qg: 40.2 nC
• Rise Time: 24 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
0.01
100
100
8000
7000
6000
5000
4000
3000
2000
1000
0.1
10
10
1
1
0
1
0.1
0
V
Single Pulse
T
V
I
V
C
Figure 11. Maximum Rated Forward Biased
D
GS
C
DD
GS
= 25°C
= 15 A
rss
= 20 V
= 15 V
= 10 V
V
Figure 9. Resistive Switching Time
4
DS
V
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
R
G
8
Safe Operating Area
, GATE RESISTANCE (W)
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
12
10
16
V
GS
= 0 V
10
TYPICAL PERFORMANCE CURVES
20
T
24
J
100 ms
10 ms
= 25°C
1 ms
10 ms
dc
http://onsemi.com
t
t
t
t
d(off)
f
r
d(on)
C
C
oss
28
iss
100
100
5
400
350
300
250
200
150
100
10
11
30
25
20
15
10
50
9
8
7
6
5
4
3
2
1
0
5
0
0
0
Figure 8. Gate−to−Source and Drain−to−Source
0.1
25
Figure 10. Diode Forward Voltage vs. Current
T
Figure 12. Maximum Avalanche Energy vs.
V
Q
J
GS
T
gs
10
= 25°C
J
0.2
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
SD
Starting Junction Temperature
50
Q
20
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
G
Voltage vs. Total Charge
, TOTAL GATE CHARGE (nC)
gd
0.3
30
75
0.4
Q
40
T
0.5
50
100
60
0.6
I
T
V
V
D
J
DD
GS
I
125
D
= 30 A
= 25°C
70
= 50 A
= 15 V
= 30 A
0.7
80
150
0.8