BCV62BE6327XT Infineon Technologies, BCV62BE6327XT Datasheet - Page 2

• Manufacturer Part Number: BCV62BE6327XT
• Description: Trans GP BJT PNP 30V 0.1A 4-Pin (3+Tab) SOT-143 T/R
• Manufacturer: Infineon Technologies
• Type: PNPr

Specifications of BCV62BE6327XT

• Package: 4SOT-143
• Supplier Package: SOT-143
• Pin Count: 4
• Minimum Dc Current Gain: 100@1mA@10V|220@2mA@5V
• Maximum Operating Frequency: 250(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 0.3@0.5mA@10mA|0.65@5mA@100mA V
• Maximum Collector Emitter Voltage: 30 V
• Maximum Emitter Base Voltage: 6 V

Electrical Characteristics at T
Parameter
DC Characteristics of T1
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain 1)
I
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
I
Base-emitter saturation voltage 1)
I
I
Base-emitter voltage 1)
I
I
1) Pulse test: t
C
C
E
C
C
C
C
C
C
C
C
CB
CB
= 10 µA, I
= 10 mA, I
= 10 µA, I
= 0.1 mA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 30 V, I
= 30 V, I
C
E
CE
CE
B
B
B
E
E
CE
300 s, D = 2%
= 0
= 0
B
B
CE
= 0
= 0.5 mA
= 0.5 mA
= 0
= 0 , T
= 5 V
= 5 V
= 5 mA
= 5 mA
= 5 V
= 5 V
A
= 150 °C
A
= 25°C, unless otherwise specified
BCV62A
BCV62B
BCV62C
2
Symbol
V
V
V
I
I
h
h
V
V
V
CBO
CBO
FE
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
BE(ON)
min.
125
220
420
600
100
30
30
6
-
-
-
-
-
-
-
Values
180
290
520
250
700
850
650
typ.
75
-
-
-
-
-
-
-
max.
220
475
800
300
650
750
820
15
2007-04-20
5
-
-
-
-
-
-
BCV62
Unit
V
nA
µA
-
mV