BCV62BE6327XT Infineon Technologies, BCV62BE6327XT Datasheet - Page 3

• Manufacturer Part Number: BCV62BE6327XT
• Description: Trans GP BJT PNP 30V 0.1A 4-Pin (3+Tab) SOT-143 T/R
• Manufacturer: Infineon Technologies
• Type: PNPr

Specifications of BCV62BE6327XT

• Package: 4SOT-143
• Supplier Package: SOT-143
• Pin Count: 4
• Minimum Dc Current Gain: 100@1mA@10V|220@2mA@5V
• Maximum Operating Frequency: 250(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 0.3@0.5mA@10mA|0.65@5mA@100mA V
• Maximum Collector Emitter Voltage: 30 V
• Maximum Emitter Base Voltage: 6 V

Electrical Characteristics at T
Parameter
DC Characteristics
Base-emitter forward voltage
I
I
Matching of transistor T1 and transistor T2
at I
T
T
Thermal coupling of transistor T1 and
transistor T2
Maximum current of thermal stability of I
AC characteristics of transistor T1
Transition frequency
I
Collector-base capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 1 kHz,
Short-circuit input impedance
I
Open-circuit reverse voltage transf.ratio
I
Short-circuit forward current transf.ratio
I
Open-circuit output admittance
I
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
E
E
C
C
C
C
C
C
A
A
CB
EB
= 10 µA
= 250 mA
= 10 mA, V
= 200 µA, V
= 1 mA, V
= 1 mA, V
= 1 mA, V
= 1 mA, V
E2
= 25 °C
= 150 °C
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
= 0.5mA and V
f = 200 Hz
CE
CE
CE
CE
1)
CE
CE
= 10 V, f = 1 kHz
= 10 V, f = 1 kHz
= 10 V, f = 1 kHz
= 10 V, f = 1 kHz
= 5 V, f = 100 MHz
T1: V
= 5 V, R
CE1
CE
= 5V
S
= 5V
= 2 k ,
A
= 25°C, unless otherwise specified.
C1
3
Symbol
V
I
I
f
C
C
F
h
h
h
h
C1
E2
T
11e
12e
21e
22e
BES
cb
eb
/ I
C2
min.
100
0.4
0.7
0.7
-
-
-
-
-
-
-
-
-
-
Values
typ.
250
1.5
4.5
30
5
8
2
2
-
-
-
-
-
-
max.
900
1.8
1.3
1.3
2007-04-20
-
-
-
-
-
-
-
-
-
-
BCV62
Unit
V
-
mA
MHz
pF
dB
k
10
-
S
-4