MCP635T-E/MF Microchip Technology, MCP635T-E/MF Datasheet - Page 22

Dual, 24MHz OP W /CS, E Temp 10 DFN 3x3mm T/R

MCP635T-E/MF

Manufacturer Part Number
MCP635T-E/MF
Description
Dual, 24MHz OP W /CS, E Temp 10 DFN 3x3mm T/R
Manufacturer
Microchip Technology
Datasheet

Specifications of MCP635T-E/MF

Amplifier Type
General Purpose
Number Of Circuits
2
Output Type
Rail-to-Rail
Slew Rate
10 V/µs
Gain Bandwidth Product
24MHz
Current - Input Bias
4pA
Voltage - Input Offset
1800µV
Current - Supply
2.5mA
Current - Output / Channel
70mA
Voltage - Supply, Single/dual (±)
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
10-DFN
Number Of Channels
2
Voltage Gain Db
124 dB
Common Mode Rejection Ratio (min)
63 dB
Input Offset Voltage
8 mV
Operating Supply Voltage
3 V, 5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP635T-E/MF
Manufacturer:
MICROCHIP
Quantity:
12 000
MCP631/2/3/5
4.2
4.2.1
The Maximum Output Voltage (see
Figure
load. For instance, the output voltage swings to within
50 mV of the negative rail with a 1 kΩ load tied to
V
4.2.2
Figure 4-4
voltage (V
V
amp into the external circuit.
FIGURE 4-4:
4.2.3
Since the output short circuit current (I
at ±70 mA (typical), these op amps are capable of both
delivering and dissipating significant power.
Figure 4-5
power calculations for a single op amp. R
most applications; it can be used to limit I
the op amp’s output voltage, V
load, and V
ground (0V). The input currents are assumed to be
negligible. The currents shown are approximately:
EQUATION 4-1:
DS22197A-page 22
DD
DD
Where:
/2.
-0.5
= 5.5V. I
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2-17) describes the output range for a given
I
Q
Rail-to-Rail Output
shows the possible combinations of output
OUT
show the quantities used in the following
LG
MAXIMUM OUTPUT VOLTAGE
OUTPUT CURRENT
POWER DISSIPATION
= quiescent supply current
OUT
V
I
OL
is the load’s ground point. V
OUT
I
(V
) and output current (I
I
DD
Limited
SS
DD
is positive when it flows out of the op
= 5.5V)
= I
–I
I
Q
L
Q
Output Current.
R
+ max(0, I
=
+ min(0, I
L
= 1 kΩ
V
I
R
OUT
OUT
SER
(mA)
– V
+ R
L
OUT
OUT
is the voltage at the
LG
R
L
L
)
)
= 100Ω
Figure 2-16
R
SC
L
V
= 10Ω
OH
) is specified
SER
OUT
OUT
SS
Limited
is usually
. V
), when
is 0 Ω in
OUT
and
is
FIGURE 4-5:
Calculations.
The instantaneous op amp power (P
(P
EQUATION 4-2:
The maximum op amp power, for resistive loads,
occurs when V
halfway between V
EQUATION 4-3:
The maximum ambient to junction temperature rise
(ΔT
using P
thermal resistance (θ
number of op amps in the package (assuming equal
power dissipations):
EQUATION 4-4:
Where:
RSER
JA
P
P
RSER
P
) and junction temperature (T
OAmax
n = number of op amps in package (1, 2)
OA
P
(t)) and load power (P
OAmax
L
V
V
(t) = I
Δ
(t) = I
(t) = I
DD
SS
T
JA
T
MCP63X
, ambient temperature (T
J
I
I
DD
SS
OUT
max
DD
L
= P
OUT
= T
2
R
(V
L
2
A
SS
OA
is halfway between V
2
I
R
OUT
(V
DD
+
SER
(t)
JA
and V
DD
4(R
Diagram for Power
Δ
– V
© 2009 Microchip Technology Inc.
) found in
V
θ
T
– V
JA
JA
OUT
SER
OUT
LG
L
LG
) + I
(t)) are:
+ R
R
:
n P
SER
, V
I
L
L
OAmax
SS
J
LG
)
Table
) can be calculated
OA
(V
(t)), R
– V
SS
A
), the package
θ
R
DD
– V
1-4, and the
JA
SS
L
and V
)
SER
OUT
V
V
L
LG
)
power
LG
or

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