PIC12F635T-I/MD Microchip Technology, PIC12F635T-I/MD Datasheet - Page 170
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
PIC12F635T-I/MD
Manufacturer Part Number
PIC12F635T-I/MD
Description
1.75 KB Flash, 64 RAM, 6 I/O 8 DFN 4x4mm T/R
Manufacturer
Microchip Technology
Series
PIC® 12Fr
Specifications of PIC12F635T-I/MD
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, WDT
Number Of I /o
5
Program Memory Size
1.75KB (1K x 14)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC164326 - MODULA SKT PM3 20QFNXLT08DFN2 - SOCKET TRANSITION ICE 14DIP/8DFNXLT08DFN - SOCKET TRANSITION ICE 8DFN
Data Converters
-
Connectivity
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PIC12F635/PIC16F636/639
15.2
DS41232D-page 168
DC CHARACTERISTICS
D020
D021
D022A
D022B
D023
D024A
D024B
D025
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 5.0V, 25 C unless otherwise stated. These parameters are for design guidance
DC Characteristics: PIC12F635/PIC16F636-I (Industrial) (Continued)
I
PD
only and are not tested.
The test conditions for all I
wave, from rail-to-rail; all I/O pins tri-stated, pulled to V
Front-End not included.
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have
an impact on the current consumption. MCU only, Analog Front-End not included.
The peripheral current is the sum of the base I
peripheral is enabled. The peripheral
current from this limit. Max values should be used when calculating total current consumption.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
Sym
Power-down Base
Current
Device Characteristics
(4)
DD
measurements in Active Operation mode are: OSC1 = external square
current can be determined by subtracting the base I
Standard Operating Conditions (unless otherwise stated)
Operating temperature
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DD
or I
Typ†
0.15
0.20
0.35
109
120
1.0
2.0
3.0
4.5
5.0
6.0
58
22
25
33
32
60
30
45
75
39
59
98
PD
DD
and the additional current consumed when this
; MCLR = V
Max
122
160
124
1.2
1.5
1.8
2.2
4.0
7.0
7.0
8.0
60
28
35
45
45
78
36
55
95
47
72
12
Units
DD
-40°C
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
; WDT disabled. MCU only, Analog
V
© 2007 Microchip Technology Inc.
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
T
DD
A
+85°C for industrial
WDT, BOR,
Comparators, V
and T1OSC disabled
WDT Current
BOR Current
PLVD Current
Comparator Current
CV
(high-range)
CV
(low-range)
T1OSC Current
Conditions
REF
REF
Current
Current
DD
Note
DD
or I
.
(1)
(1)
(1)
(1)
PD
REF
(3)
(3)
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