PIC18F26K80-I/MM Microchip Technology, PIC18F26K80-I/MM Datasheet - Page 140
![ECAN, 64KB Flash, 4KB RAM, 16 MIPS, 12-bit ADC, CTMU 28 QFN-S 6x6mm TUBE](/photos/16/12/161267/qfn-28_sml.jpg)
PIC18F26K80-I/MM
Manufacturer Part Number
PIC18F26K80-I/MM
Description
ECAN, 64KB Flash, 4KB RAM, 16 MIPS, 12-bit ADC, CTMU 28 QFN-S 6x6mm TUBE
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheet
1.PIC18F25K80-ISO.pdf
(628 pages)
Specifications of PIC18F26K80-I/MM
Core Processor
PIC
Core Size
8-Bit
Speed
64MHz
Connectivity
ECAN, I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
24
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
3.6K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-VQFN Exposed Pad
Processor Series
PIC18F26K80
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3648 B
Interface Type
I2C, SPI
Maximum Clock Frequency
64 MHz
Number Of Programmable I/os
24
Number Of Timers
5
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PIC18F66K80 FAMILY
7.4
The erase blocks are 32 words or 64 bytes.
Word erase in the Flash array is not supported.
When initiating an erase sequence from the micro-
controller itself, a block of 64 bytes of program memory
is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased. The
TBLPTR<5:0> bits are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash
program memory. The WREN bit must be set to enable
write operations. The FREE bit is set to select an erase
operation.
For protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
EXAMPLE 7-2:
DS39977C-page 140
Required
Sequence
Erasing Flash Program Memory
ERASE_ROW
ERASING A FLASH PROGRAM MEMORY ROW
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BCF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
Preliminary
7.4.1
The sequence of events for erasing a block of internal
program memory location is:
1.
2.
3.
4.
5.
6.
7.
; load TBLPTR with the base
; address of the memory block
; point to Flash program memory
; access Flash program memory
; enable write to memory
; enable Row Erase operation
; disable interrupts
; write 55h
; write 0AAh
; start erase (CPU stall)
; re-enable interrupts
Load the Table Pointer register with the address
of row to be erased.
Set the EECON1 register for the erase operation:
• Set the EEPGD bit to point to program memory
• Clear the CFGS bit to access program memory
• Set the WREN bit to enable writes
• Set the FREE bit to enable the erase
Disable the interrupts.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit.
This begins the row erase cycle.
The CPU will stall for the duration of the erase
for T
Re-enable interrupts.
IW
. (See Parameter D133A.)
FLASH PROGRAM MEMORY
ERASE SEQUENCE
2011 Microchip Technology Inc.
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