PIC18LF13K22-E/ML Microchip Technology, PIC18LF13K22-E/ML Datasheet - Page 347

8KB Flash, 256bytes RAM, 256bytes EEPROM, 16MIPS, NanoWatt XLP 20 QFN 4x4mm TUBE

PIC18LF13K22-E/ML

Manufacturer Part Number
PIC18LF13K22-E/ML
Description
8KB Flash, 256bytes RAM, 256bytes EEPROM, 16MIPS, NanoWatt XLP 20 QFN 4x4mm TUBE
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr

Specifications of PIC18LF13K22-E/ML

Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
17
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
20-VQFN Exposed Pad, 20-HVQFN, 20-SQFN, 20-DHVQFN
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
EUSART, I2C, SPI
Maximum Clock Frequency
32 KHz
Number Of Programmable I/os
18
Number Of Timers
4
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
A/d Bit Size
10 bit
A/d Channels Available
12
Height
0.88 mm
Length
4 mm
Supply Voltage (max)
3.6 V
Supply Voltage (min)
1.8 V, 2.7 V
Width
4 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
25.11 Thermal Considerations
 2010 Microchip Technology Inc.
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
TH01
TH02
TH03
TH04
TH05
TH06
TH07
Legend:
Note 1:
Param
No.
2:
3:
T
PD
P
P
P
JA
JC
JMAX
INTERNAL
I
DER
/
O
Sym.
TBD = To Be Determined
I
T
T
DD
A
J
= Ambient Temperature.
= Junction Temperature.
is current to run the chip alone without driving any load on the output pins.
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Maximum Junction Temperature
Power Dissipation
Internal Power Dissipation
I/O Power Dissipation
Derated Power
A
Characteristic
 +125°C
Preliminary
PIC18F1XK22/LF1XK22
108.1
Typ.
62.4
85.2
31.4
150
2.5
40
24
24
Units
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C
W
W
W
W
20-pin PDIP package
20-pin SOIC package
20-pin SSOP package
20-pin QFN 4x4mm package
20-pin PDIP package
20-pin SOIC package
20-pin SSOP package
20-pin QFN 4x4mm package
PD = P
P
P
P
INTERNAL
I
DER
/
O
=  (I
= PD
INTERNAL
OL
= I
MAX
* V
DD
Conditions
(T
OL
+ P
x V
J
) +  (I
- T
DD
I
/
O
A
DS41365D-page 347
(1)
)/
OH
JA
(2)
* (V
DD
- V
OH
))

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