S29JL032H70TFI420 Spansion Inc., S29JL032H70TFI420 Datasheet - Page 35

• Manufacturer Part Number: S29JL032H70TFI420
• Description: IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC
• Manufacturer: Spansion Inc.

Specifications of S29JL032H70TFI420

• Data Bus Width: 8 bit, 16 bit
• Architecture: Boot Sector
• Interface Type: Conventional
• Access Time: 70 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 2 mA
• Mounting Style: SMD/SMT
• Memory Type: Flash
• Memory Size: 32 Mbit
• Operating Temperature: + 85 C
• Package / Case: TSOP-48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

May 21, 2004 S29JL032HA0
Sector Erase Command Sequence
5 illustrates the algorithm for the erase operation. Refer to the Erase and Program
Operations tables in the AC Characteristics section for parameters, and
section for timing diagrams.
Sector erase is a six bus cycle operation. The sector erase command sequence is
initiated by writing two unlock cycles, followed by a set-up command. Two addi-
tional unlock cycles are written, and are then followed by the address of the
sector to be erased, and the sector erase command. Table
and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Em-
bedded Erase algorithm automatically programs and verifies the entire sector for
an all zero data pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 80 µs occurs.
During the time-out period, additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 80 µs, otherwise erasure
may begin. Any sector erase address and command following the exceeded time-
out may or may not be accepted. It is recommended that processor interrupts be
disabled during this time to ensure all commands are accepted. The interrupts
can be re-enabled after the last Sector Erase command is written. Any com-
mand other than Sector Erase or Erase Suspend during the time-out
period resets that bank to the read mode. The system must rewrite the com-
mand sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out
(See the section on DQ3: Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# or CE# pulse (first rising edge) in the command
sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading
array data and addresses are no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read data from the non-erasing
bank. The system can determine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to the Write Operation Sta-
tus section for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is
valid. All other commands are ignored. However, note that a hardware reset im-
mediately terminates the erase operation. If that occurs, the sector erase
command sequence should be reinitiated once that bank has returned to reading
array data, to ensure data integrity. Note that the SecSi Sector, autoselect, and
CFI functions are unavailable when an erase operation is in progress.
5 illustrates the algorithm for the erase operation. Refer to the Erase and Program
Operations tables in the AC Characteristics section for parameters, and
section for timing diagrams.
A D V A N C E
I N F O R M A T I O N
S29JL032H
13
shows the address
Figure 20
Figure 20
35