SST25VF080B-80-4I-QAE Microchip Technology, SST25VF080B-80-4I-QAE Datasheet - Page 23
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SST25VF080B-80-4I-QAE
Manufacturer Part Number
SST25VF080B-80-4I-QAE
Description
2.7V To 3.6V 8Mbit SPI Serial Flash 8 TDFN-S 6x5x0.8mm TUBE
Manufacturer
Microchip Technology
Specifications of SST25VF080B-80-4I-QAE
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
80MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-WSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . -2.0V to V
Package Power Dissipation Capability (T
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
Table 8: Operating Range
Table 9: AC Conditions of Test
Table 10:DC Operating Characteristics (SST25VF080B-50-xx-xxxx)
Range
Commercial
Industrial
Symbol Parameter
I
I
I
I
I
I
V
V
V
V
V
DDR
DDR2
DDW
SB
LI
LO
IL
IH
OL
OL2
OH
1. See Figures 26 and 27
1. Output shorted for no more than one second. No more than one output shorted at a time.
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
Input Rise/Fall Time
5ns
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1
23
0.7 V
V
A
DD
Min
= 25°C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
-0.2
DD
Limits
Ambient Temp
-40°C to +85°C
0°C to +70°C
Max Units
0.8
0.2
0.4
10
15
30
20
1
1
mA
mA
mA
µA
µA
µA
V
V
V
V
V
8 Mbit SPI Serial Flash
Test Conditions
CE#=0.1 V
CE#=0.1 V
CE#=V
CE#=V
V
V
V
V
I
I
I
OL
OL
OH
IN
OUT
DD
DD
=100 µA, V
=1.6 mA, V
=GND to V
=-100 µA, V
=V
=V
=GND to V
DD
DD
DD
DD
Output Load
, V
Min
Max
C
DD
DD
L
IN
/0.9 V
/0.9 V
= 30 pF
=V
DD
DD
DD
DD
DD
, V
=V
=V
DD
=V
SST25VF080B
, V
DD
DD
DD
DD
DD
or V
DD
DD
@25 MHz, SO=open
@50 MHz, SO=open
=V
Min
Min
Min
=V
SS
DD
2.7-3.6V
2.7-3.6V
S71296-05-000
DD
Max
V
Max
DD
Data Sheet
DD
DD
+0.5V
+2.0V
T10.0 1296
T9.1 1296
T8.1 1296
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