XRD5412AIP-F Exar Corporation, XRD5412AIP-F Datasheet - Page 5

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XRD5412AIP-F

Manufacturer Part Number
XRD5412AIP-F
Description
Low Power 12-Bit DAC With Serial Input
Manufacturer
Exar Corporation
Datasheet

Specifications of XRD5412AIP-F

Settling Time
13µs
Number Of Bits
12
Data Interface
Serial
Number Of Converters
1
Voltage Supply Source
Single Supply
Power Dissipation (max)
117mW
Operating Temperature
-40°C ~ 85°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
Test Conditions: V
Unless Otherwise Noted.
ABSOLUTE MAXIMUM RATINGS
V
Digital Input Voltage to GND
V
V
Continuous Current, Any Pin
Notes
1
2
stress rating only and functional operation at or above this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
(HP5082-2835) from input pin to the supplies. All inputs have protection diodes which will protect the device from short
transients outside the supplies of less than 100mA for less than 100
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
Any input pin which can see a value outside the absolute maximum ratings should be protected by Schottky diode clamps
DD
REFIN
OUT
Symbol
t
Rev. 1.20
t
to GND
CSW
t
t
t
CS1
1
DH
DO
DS
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
D
D
D
CS High Pulse Width
CS Rise to SCLK Rise Setup
Time
IN
IN
OUT
Setup Time
Hold Time
Valid Propagation Delay
DD
= 5V, GND= 0V, REFIN= 2.048V (External), R
. . . . . .
. . . . . . . .
Specifications are subject to change without notice
-0.3V, V
-0.3V, V
-20mA, +20mA
(CONT’D)
-0.3V, +7V
V
DD
DD
DD
Min.
, GND
+0.3V
+0.3V
10
20
10
0
Typ.
45
40
20
5
8
Package Power Dissipation Ratings (T
Operating Temperature Range
Storage Temperature Range
Lead Temperature (soldering, 10 sec)
m
PDIP (derate 9mW/°C above +70°C)
SOIC (derate 6mW/°C above +70°C)
s.
Max.
15
L
= 10kW, C
Unit
ns
ns
ns
ns
ns
L
= 100pF, T
Conditions
C
L
= 50pF
. . . . . .
. . . . .
A
= T
MIN
-65°C to +165°C
-40°C to + 85°C
A
. . . . . .
= +70°C)
. . . .
to T
. . .
MAX
155mW
117mW
+300°C
,

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