TZA3046UN1 NXP Semiconductors, TZA3046UN1 Datasheet - Page 3

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TZA3046UN1

Manufacturer Part Number
TZA3046UN1
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TZA3046UN1

Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Philips Semiconductors
6. Pinning information
Table 2:
Bonding pad locations with respect to the center of the die (see
TZA3046_1
Product data sheet
Symbol
DREF
IPHOTO
DREF
V
IDREF_MON
AGC
OUTQ
OUT
GND
GND
CC
Bonding pad description
Pad X
1
2
3
4
5
6
7
8
9
10
6.1 Pinning
6.2 Pin description
66.4
206.4
346.4
486.4
493.6
493.6
493.6
353.6
213.6
73.6
Fig 2. Pin configuration
Y
140
0
140
278.6 supply
278.6 output
278.6 input
278.6 output
278.6 output
278.6 ground
278.6 ground
Type
output
input
output
IDREF_MON
Rev. 01 — 19 May 2006
OUTQ
GND
GND
AGC
OUT
V
CC
Description
bias voltage output for PIN diode; connect cathode of PIN diode to
pad 1 or pad 3
current input; anode of PIN diode should be connected to this pad
bias voltage output for PIN diode; connect cathode of PIN diode to
pad 1 or pad 3
supply voltage; connect supply voltage to pad 4 or pad 17
current output for RSSI measurements; connect a resistor to pad 5
or pad 16 and ground
AGC voltage; use pad 6 or pad 15
data output; complement of pad OUT; use pad 7 or pad 13
data output; use pad 8 or pad 14
ground; connect together pads 9, 10, 11 and pad 12 as many as
possible
ground; connect together pads 9, 10, 11 and pad 12 as many as
possible
Fiber Channel/Gigabit Ethernet transimpedance amplifier
10
4
5
6
7
9
8
Figure
3
TZA3046
10); X and Y are in m.
2
1
001aae512
17
16
15
14
13
12
11
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
V
IDREF_MON
AGC
OUT
OUTQ
GND
GND
CC
TZA3046
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