PF38F1030W0YCQEA Micron Technology Inc, PF38F1030W0YCQEA Datasheet - Page 77
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
PF38F1030W0YCQEA
Manufacturer Part Number
PF38F1030W0YCQEA
Description
Manufacturer
Micron Technology Inc
Datasheet
1.PF38F1030W0YCQEA.pdf
(102 pages)
Specifications of PF38F1030W0YCQEA
Operating Supply Voltage (max)
1.95V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
- Current page: 77 of 102
- Download datasheet (2Mb)
Numonyx™ Wireless Flash Memory (W18)
Figure 34: Protection Register Locking
13.3
Figure 35: Examples of VPP Power Supply Configurations
Note:
November 2007
Order Number: 290701-18
If the V
CC
VPP Protection
The Numonyx™ Wireless Flash Memory (W18) provides in-system program and erase
at V
12 V programming
feature can also be used to greatly improve factory program performance as explained
in
In addition to the flexible block locking, holding the V
provide absolute hardware write protection of all flash-device blocks. If V
V
Figure
supply can sink adequate current, you can use an appropriately valued resistor.
PPLK
Section 11.3, “Enhanced Factory Program (EFP)” on page
PP1
, program or erase operations result in an error displayed in SR[3]. (See
. For factory programming, it also includes a low-cost, backward-compatible
35.)
• 12 V fast programming
• Absolute write protection with V
• Low voltage and 12 V fast programming
System supply
12 V supply
System supply
12 V supply
≤ 10K Ω
(Note 1)
feature.(Section 11.2, “Factory Programming” on page
0x88
0x85
0x84
0x81
0x80
15 14 13 12 11 10 9
VCC
VPP
VCC
VPP
Intel Factory-Programmed
User-Programmable
PP
PR Lock Register 0
≤ V
PPLK
8
7
6
5
• Low-voltage programming
• Absolute write protection via logic signal
• Low-voltage programming
4
3
System supply
Prot# (logic signal)
System supply
2
PP
1
0
programming voltage low can
61.
VCC
VPP
VCC
VPP
PP
60) The EFP
is below
Datasheet
77
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