RD38F2020W0YTQ0 Micron Technology Inc, RD38F2020W0YTQ0 Datasheet - Page 15
RD38F2020W0YTQ0
Manufacturer Part Number
RD38F2020W0YTQ0
Description
Manufacturer
Micron Technology Inc
Datasheet
1.RD38F2020W0YTQ0.pdf
(52 pages)
Specifications of RD38F2020W0YTQ0
Operating Supply Voltage (max)
1.95V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RD38F2020W0YTQ0
Manufacturer:
INTEL
Quantity:
6 222
Company:
Part Number:
RD38F2020W0YTQ0
Manufacturer:
SEMTECH
Quantity:
1 048
Table 1.
Datasheet
F[2:1]-VCC
F[2:1]-OE#
P-MODE
Symbol
F-VPEN
F-RST#
F-WE#
R-WE#
F-WP#
S-VCC
P-VCC
R-OE#
R-UB#
R-LB#
F-VPP
VCCQ
VSS
RFU
DU
Power
Power
Power
Power
Power
Power
Type
Input
Input
Input
Input
Input
Input
Input
Input
Signal Descriptions (Sheet 2 of 2)
—
—
FLASH OUTPUT ENABLE: Low-true; OE#-low enables the flash output buffers. OE#-high disables
the flash output buffers, and places the flash outputs in High-Z.
F1-OE# controls the outputs of flash die #1; F2-OE# controls the outputs of flash die #2 and #3, and is
available only on SCSP combinations with two or three flash die and is RFU on SCSP combinations
with only one flash die.
RAM OUTPUT ENABLE: Low-true; R-OE#-low enables the RAM output buffers. R-OE#-high
disables the RAM output buffers, and places the RAM outputs in High-Z.
R-OE# is only available on SCSP combinations with RAM die.
RAM UPPER/ LOWER BYTE ENABLES: Low-true; During RAM reads, R-UB#-low enables the RAM
high-order bytes on D[15:8], and R-LB#-low enables the RAM low-order bytes on D[7:0].
R-UB# and R-LB# are only available on SCSP combinations with either SRAM die or PSRAM die.
FLASH WRITE ENABLE: Low-true; WE# controls writes to the selected flash die. Address and data
are latched on the rising edge of WE#.
RAM WRITE ENABLE: Low-true; R-WE# controls writes to the RAM die.
R-WE# is only available on SCSP combinations with RAM die.
FLASH WRITE PROTECT: Low-true; WP# enables/disables the lock-down protection mechanism of
the flash die. WP#-low enables the lock-down mechanism- locked down blocks cannot be unlocked
with software commands. WP#-high disables the lock-down mechanism, allowing locked down blocks
to be unlocked with software commands.
FLASH RESET: Low-true; RST#-low initializes flash internal circuitry and disables flash operations.
RST#-high enables flash operation. Exit from reset places the flash in asynchronous read array
mode.
FLASH PROGRAM/ ERASE POWER: A valid F-V
operations. Flash memory array contents cannot be altered when F-V
Erase/ program operations at invalid F-V
flash discrete product datasheet for additional details.
F-V
PSRAM MODE: Low-true; P-MODE is used to enter/exit low power mode.
Low power mode is not applicable to 38F2020W0ZTQ1, 38F2020W0ZBQ1, 38F2030W0YTQ1,
38F2030W0YBQ1, 38F2030W0ZTQ2, 38F2030W0ZBQ2, 38F1030W0ZTQ0, 38F1030W0ZBQ0,
38F1030W0YTQE, 38F1030W0YBQE.
P-Mode is only available on SCSP combinations with PSRAM die.
FLASH LOGIC Power: F1-VCC supplies power to the core logic of flash die #1; F2-VCC supplies
power to the core logic of flash die #2 and #3. Write operations are inhibited when F-V
Device operations at invalid F-V
F2-VCC is only available on SCSP combinations with two or three flash die, and is RFU on SCSP
combinations with only one flash die.
SRAM Power Supply: Supplies power to the SRAM die.
S-VCC is only available on SCSP combinations with SRAM die.
PSRAM Power Supply: Supplies power to the PSRAM die.
P-VCC is only available on SCSP combinations with PSRAM die.
FLASH OUTPUT-BUFFER Power: Supplies power for the I/O output buffers.
Ground: Connect to ground. Do not float any VSS connection.
Reserved for Future Use: Reserve for future device functionality/ enhancements.
Do Not Use: Do not connect to any other signal, or power supply; must be left floating.
PEN
Intel® Wireless Flash Memory (W18/W30 SCSP)
(Erase/Program/Block Lock Enables) is not available for W18/W30 products.
Order Number: 251407, Revision: 009
CC
voltages should not be attempted.
Intel® Wireless Flash Memory (W18/W30 SCSP)
Name and Function
PP
(V
PEN
) voltages should not be attempted. Refer to the
PP
voltage on this ball enables flash program/erase
PP
(V
PEN
) < V
PPLK
CC
(V
< V
June 2005
PENLK
LKO
).
.
15