RD38F2020W0YTQ0 Micron Technology Inc, RD38F2020W0YTQ0 Datasheet - Page 19

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RD38F2020W0YTQ0

Manufacturer Part Number
RD38F2020W0YTQ0
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of RD38F2020W0YTQ0

Operating Supply Voltage (max)
1.95V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RD38F2020W0YTQ0
Manufacturer:
INTEL
Quantity:
6 222
Part Number:
RD38F2020W0YTQ0
Manufacturer:
SEMTECH
Quantity:
1 048
Table 1.
Table 2.
Datasheet
Notes:
1.
2.
3.
Parameter
* Input leakage currents include Hi-Z output leakage for bi-directional buffers with tri-state outputs.
I
V
V
V
*I
I
I
V
I
CC2
I
V
I
I
sbd
CC
OH
I
SB
OL
OL
*I
CC
OH
OL
IL
LDR
IH
IL
IL
Input Leakage currents include Hi-Z output leakage for bi-directional buffers with tri-state outputs.
All currents are in RMS unless noted otherwise.
Not applicable to 38F2020W0ZTQ1, 38F2020W0ZBQ1, 38F2030W0YTQ1, 38F2030W0YBQ1,
38F2030W0ZTQ2, 38F2030W0ZBQ2, 38F1030W0ZTQ0, 38F1030W0ZBQ0, 38F1030W0YTQE,
38F1030W0YBQE.
Voltage Range
Operating Current
at min cycle time
Operating Current
at max cycle time
(1 µs)
Standby Current
Deep Power-Down
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW Voltage
Output HIGH
Current
Output LOW
Current
Input Leakage
Current
Output Leakage
Current
Input Leakage Current
Input Leakage Current
in Data Retention
Mode
Description
SRAM DC Characteristics (Sheet 2 of 2)
PSRAM DC Characteristics
Intel® Wireless Flash Memory (W18/W30 SCSP)
P-Mode ≥ P-V
-0.2 < V
-0.2 < V
P-CS# ≥ P-V
P-Mode ≤ 0.2 V
minimum cycle
Address/Data
I
I
toggling at
IO
IO
Test Conditions
Order Number: 251407, Revision: 009
0.2V or
I
P-V
0.2V
time
OH
= 0 mA
= 0 mA
I
OL
IN
IN
= -0.5 mA
CC
-0.2 < V
-0.2 < V
< P-V
< P-V
= 1 mA,
= V
CC
CC
-
CC
CC
-
DR
S-V
IN
IN
+0.2 V
+0.5 V
< S-V
< S-V
CC
16M
32M
16M
32M
16M
32M
16M
32M
= V
CC
CC
DR
0.8P-V
0.8P-V
+ 0.2 V
+ 0.2 V
Intel® Wireless Flash Memory (W18/W30 SCSP)
–0.3
Min
1.8
-1
-1
1.8 V PSRAM
CC
CC
P-V
0.2P-V
0.2P-V
1.95
Max
100
CC
35
30
+1
+1
-1
-1
+0.3
CC
CC
P-V
Min
-0.2
+1
+1
2.7
2.4
0.3
3.0 V PSRAM
-1
-1
CC
-
P-V
Max
100
3.1
-1
-1
0.4
0.2
0.5
+1
+1
35
45
85
10
10
7
7
CC
+
Unit
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
+1
+1
June 2005
1, 2, 3
1, 2, 3
Note
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
3
3
3
3
3
µA
µA
19

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