RD38F2020W0YTQ0 Micron Technology Inc, RD38F2020W0YTQ0 Datasheet - Page 25

• Manufacturer Part Number: RD38F2020W0YTQ0
• Manufacturer: Micron Technology Inc

Specifications of RD38F2020W0YTQ0

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Table 14.
Table 15.
Datasheet
Note:
1.
2.
3.
4.
5.
6.
Notes:
1.
2.
3.
4.
5.
6.
PR1
PR2
W1
W2
W3
W4
W5
W6
W7
W8
W9
#
#
See
Page Read Operation” on page 27
Timings of t
referenced to output voltage levels.
At any given temperature and voltage condition, t
to device interconnection.
4-Word Page read only available for 16-Mbit PSRAM. No page mode feature for 8-Mbit PSRAM.
8-Mbit has additional skew limitation of 10 ns. 16-Mbit does not have this limitation.
Applicable to 38F2020W0ZTQ1, 38F2020W0ZBQ1, 38F2030W0YTQ1, 38F2030W0YBQ1, 38F2030W0ZTQ2,
38F2030W0ZBQ2, 38F1030W0ZTQ0, 38F1030W0ZBQ0, 38F1030W0YTQE, 38F1030W0YBQE.
See
A write occurs during the overlap (t
goes low with asserting R-UB# or R-LB# for single byte operation or simultaneously asserting R-UB# and R-LB# for
double byte operation. A write ends at the earliest transition when P-CS# goes high and R-WE# goes high. The t
measured from the beginning to the end of a write.
t
t
t
going high.
Not applicable to 38F2020W0ZTQ1, 38F2020W0ZBQ1, 38F2030W0YTQ1, 38F2030W0YBQ1, 38F2030W0ZTQ2,
38F2030W0ZBQ2, 38F1030W0ZTQ0, 38F1030W0ZBQ0, 38F1030W0YTQE, 38F1030W0YBQE.
WP
AS
WR
t
WR
Symbol
is measured from the address valid to the beginning of a write.
Symbol
is measured from P-CS# going low to end of a write.
is measured from the end of a write to the address change. t
Figure 7, “AC Waveform of PSRAM Read Operations” on page 27
Figure 9, “AC Waveform PSRAM Write Operation”
t
t
PC
PA
t
t
t
t
t
t
t
t
WC
DW
CW
WP
AW
BW
AS
DH
PSRAM AC Characteristics — Read Operations (Sheet 2 of 2)
PSRAM AC Characteristics—Write Operations
HZ
Page Cycle Time
Page Access Time
and t
Write Cycle Time
Address Setup to R-WE#
(P-CS#) and R-UB#, R-LB# going low
R-WE#(P-CS#) Pulse Width
Data to Write Time Overlap
Address Setup to R-WE#
(P-CS#) Going High
P-CS# (R-WE#) Setup to R-WE# (P-CS#)
Going High
Data Hold from R-WE#
(P-CS#) High
Write Recovery
R-UB#, R-LB# Setup to R-WE# (P-CS#) Going
High
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not
Intel® Wireless Flash Memory (W18/W30 SCSP)
Parameter
Order Number: 251407, Revision: 009
Parameter
WP
) of low P-CS# and low R-WE#. A write begins when P-CS# goes low and R-WE#
6
6
HZ
(Max) is less than t
.
Intel® Wireless Flash Memory (W18/W30 SCSP)
Min
25
–
WR
1.8 V
Min
applied in case a write ends as P-CS# or R-WE#
85
60
30
70
70
70
0
0
0
LZ
and
Max
1.8 V
25
(Max) both for a given device and from device
–
Figure 8, “AC Waveform of PSRAM 4-Word
4,000
Max
–
–
–
–
–
–
–
–
Min
25
–
3.0 V
Min
85
85
35
70
70
20
70
0
0
Max
3.0 V
25
–
4,000
Max
–
–
–
–
–
–
–
–
Unit
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
June 2005
Notes
1,5
WP
Notes
4
4
1,2,3
1,4
1
1
1
1
1
1
is
25