MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 38

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 16:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
BANK ADDRESS
COMMAND
ADDRESS
V
V
DK#
V
DD
CK#
V
REF
DM
V
DK
R
CK
EXT
Q
D
DD
TT
TT
Q
High-Z
High-Z
High-Z
Power-Up/Initialization Sequence
NOP
T0
Notes:
t CKH
t DKH
Power-up:
V
clock (CK, CK#)
DD
t CK
t DK
and stable
T = 200µs (MIN)
t CKL
t DKL
NOP
T1
1. Recommend all address pins held LOW during dummy MRS commands.
2. A10–A17 must be LOW.
3. DLL must be reset if
4. CK and CK# must be separated at all times to prevent bogus commands from being issued.
5. The sequence of the eight AUTO REFRESH commands (with respect to the 1,024 NOP com-
mands) does not matter. As is required for any operation, tRC must be met between an
AUTO REFRESH command and a subsequent VALID command to the same bank.
NOP
T2
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288Mb: x18 2.5V V
NOP
T3
t
CK or V
CODE
MRS
T4
DD
41
1,2
are changed.
CODE
MRS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
1,2
EXT
, 1.8V V
CODE
MRS
T6
2
t MRSC
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DD
Bank 0
T7
, HSTL, SIO, RLDRAM II
REF
all banks 5
©2003Micron Technology, Inc. All rights reserved.
Refresh
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Bank 7
T8
REF
commands
1,024 NOP
Operations
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VALID
VALID
VALID
T9
DON’T CARE