MT49H32M9BM-25 Micron Technology Inc, MT49H32M9BM-25 Datasheet - Page 19

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MT49H32M9BM-25

Manufacturer Part Number
MT49H32M9BM-25
Description
Manufacturer
Micron Technology Inc
Type
RLDRAMr
Datasheet

Specifications of MT49H32M9BM-25

Organization
32Mx9
Density
288Mb
Address Bus
22b
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Package Type
uBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
779mA
Pin Count
144
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

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PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN
Notes:
1. I
2.
3. Input slew rate is specified in Table 8 on page 19.
4. Definitions for I
5. CS# is HIGH unless a READ, WRITE, AREF, or MRS command is registered. CS# never transi-
6. I
7. Tests for AC timing, I
8. I
4b. HIGH is defined as V
4d. Floating is defined as inputs at V
4g. Sequential bank access is defined as the bank address incrementing by one every
4h. Cyclic bank access is defined as the bank address incrementing by one for each com-
4a. LOW is defined as V
4e. Continuous data is defined as half the DQ signals changing between HIGH and LOW
4c. Stable is defined as inputs remaining at a HIGH or LOW level.
4f. Continuous address is defined as half the address signals changing between HIGH and
≤ V
t
tions more than once per clock cycle.
nal reference/supply voltage levels, but the related specifications and device operations are
tested for the full voltage range specified.
is still referenced to V
are tested for the specified AC input levels under normal use conditions. The minimum slew
rate for the input signals used to test the device is 2 V/ns in the range between V
V
DD
DD
DD
CK =
IH
(
DD
every half clock cycle (twice per clock).
LOW every clock cycle (once per clock).
mand access. For BL = 2 this is every clock, for BL = 4 this is every other clock, and for
BL = 8 this is every fourth clock.
specifications are tested after the device is properly initialized. +0°C ≤ T
parameters are specified with ODT disabled.
tests may use a V
288Mb: x9, x18, x36 2.5V V
AC
t
).
≤ +1.9V, +2.38V ≤ V
DK = MIN,
DD
t
RC = MIN.
conditions:
DD
IL
REF
-to-V
, and electrical AC and DC characteristics may be conducted at nomi-
IN
IN
(or to the crossing point for CK/CK#), and parameter specifications
EXT
≤ V
≥ V
IH
19
IL
≤ +2.63V, +1.4V ≤ V
IH
swing of up to 1.5V in the test environment, but input timing
(
AC
(
AC
) MAX.
) MIN.
REF
Micron Technology, Inc., reserves the right to change products or specifications without notice.
= V
EXT
DD
Q/2.
, 1.8V V
DD
Electrical Specifications – I
Q ≤ V
DD
DD
, V
, HSTL, CIO, RLDRAM II
REF
©2003 Micron Technology, Inc. All rights reserved.
= V
DD
Q/2.
C
≤ +95°C; +1.7V
IL
(
AC
t
) and
RC.
DD

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