MT49H32M9BM-25 Micron Technology Inc, MT49H32M9BM-25 Datasheet - Page 35

• Manufacturer Part Number: MT49H32M9BM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M9BM-25

• Organization: 32Mx9
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 12:
Table 19:
Address Multiplexing
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
COMMAND
ADDRESS
QVLD
QVLD
QVLD
QK#
QK#
QK#
DQ
CK#
DQ
DQ
QK
QK
QK
CK
Address Widths at Different Burst Lengths
Read Burst Lengths
Bank a,
READ
Col n
T0
Notes:
1. DO an = data-out from bank a and address an.
2. Subsequent elements of data-out appear after DO n.
3. Shown with nominal
Although the RLDRAM has the ability to operate with an SRAM interface by accepting
the entire address in one clock, an option in the mode register can be set so that it func-
tions with multiplexed addresses, similar to a traditional DRAM. In multiplexed address
mode, the address can be provided to the RLDRAM in two parts that are latched into the
memory with two consecutive rising clock edges. This provides the advantage of only
needing a maximum of 11 address balls to control the RLDRAM, reducing the number of
NOP
T1
RL = 4
288Mb: x9, x18, x36 2.5V V
Burst Length
NOP
T2
2
4
8
t
CKQK.
T3
NOP
34
A0–A20
A0–A19
A0–A18
T4
NOP
x9
DO
an
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DO
DO
an
an
T4n
EXT
, 1.8V V
T5
NOP
T5n
TRANSITIONING DATA
A0–A19
A0–A18
A0–A17
DD
x18
, HSTL, CIO, RLDRAM II
T6
NOP
©2003 Micron Technology, Inc. All rights reserved.
T6n
T7
NOP
Commands
A0–A18
A0–A17
DON’T CARE
x36
n/a
T7n
NOP