MT49H32M9BM-25 Micron Technology Inc, MT49H32M9BM-25 Datasheet - Page 57

• Manufacturer Part Number: MT49H32M9BM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M9BM-25

• Organization: 32Mx9
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 33:
Figure 34:
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
COMMAND
ADDRESS
DQ ODT
QVLD
QK#
COMMAND
DQ
CK#
QK
CK
ADDRESS
QKx#
DKx#
QKx
ODT
DKx
CK#
DQ
CK
READ-NOP-READ with ODT
READ-to-WRITE with ODT
Bank a,
READ
Col n
T0
READ
Bank a
Notes:
Add n
Notes:
T0
1. DO an (or bn) = data-out from bank a (or bank b) and address n.
2. BL = 2.
3. One subsequent element of the burst appear after DO an and DO bn.
4. Nominal conditions are assumed for specifications not defined.
1. DO an = data-out from bank a and address n; DI bn = data-in for bank b and address n.
2. BL = 2.
3. One subsequent element of each burst appears after each DO an and DI bn.
4. Nominal conditions are assumed for specifications not defined.
WRITE
Bank b
Add n
NOP
T1
T1
RL = 4
ODT on
288Mb: x9, x18, x36 2.5V V
DQ ODT on
RL = 4
NOP
T2
Bank b,
READ
Col n
T2
NOP
T3
WL = 5
T3
NOP
NOP
T4
56
DO
an
ODT off
T4n
T4
NOP
NOP
T5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DO
an
DQ ODT off
EXT
T4n
, 1.8V V
NOP
T6
bn
DI
T5
NOP
T6n
DQ ODT on
TRANSITIONING DATA
NOP
DD
T7
UNDEFINED
, HSTL, CIO, RLDRAM II
ODT on
T6
NOP
©2003 Micron Technology, Inc. All rights reserved.
DO
bn
DQ ODT off
NOP
T8
T6n
DON’T CARE
T7
NOP
Operations
T9
DQ ODT on
DON’T CARE
NOP