MT47H128M8HQ-3 L:E TR Micron Technology Inc, MT47H128M8HQ-3 L:E TR Datasheet - Page 93
MT47H128M8HQ-3 L:E TR
Manufacturer Part Number
MT47H128M8HQ-3 L:E TR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H128M8HQ-3_LE_TR.pdf
(135 pages)
Specifications of MT47H128M8HQ-3 L:E TR
Organization
128Mx8
Density
1Gb
Address Bus
17b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
135mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 43: Multibank Activate Restriction
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Bank address
Command
Address
CK#
CK
Bank a
ACT
Row
T0
Note:
t RRD (MIN)
READ
Bank a
Col
T1
1. DDR2-533 (-37E, x4 or x8),
t
FAW (MIN) = 37.5ns.
Bank b
Row
ACT
T2
READ
Bank b
Col
T3
Bank c
Row
ACT
T4
93
t
CK = 3.75ns, BL = 4, AL = 3, CL = 4,
t FAW (MIN)
READ
Bank c
Col
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank d
Row
ACT
T6
1Gb: x4, x8, x16 DDR2 SDRAM
READ
Bank d
Col
T7
NOP
T8
© 2004 Micron Technology, Inc. All rights reserved.
t
RRD (MIN) = 7.5ns,
NOP
T9
ACTIVATE
Don’t Care
Bank e
Row
T10
ACT
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