K4H561638F-ULB3 Samsung Semiconductor, K4H561638F-ULB3 Datasheet - Page 13

• Manufacturer Part Number: K4H561638F-ULB3
• Manufacturer: Samsung Semiconductor
• Type: DDR SDRAMr

Specifications of K4H561638F-ULB3

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 200mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
AC Overshoot/Undershoot specification for Address and Control Pins
DDR SDRAM 256Mb F-die (x8, x16) Pb-Free
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
AC Operating Conditions
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
Parameter/Condition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.5V
0
Parameter
AC overshoot/Undershoot Definition
Area = 4.5V-ns
0.5
0.6875
VDD
1.0
Overshoot
1.5
2.0
2.5
3.0
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Tims(ns)
3.5
4.0
4.5
0.5*VDDQ-0.2
VREF + 0.31
5.0
Maximum Amplitude = 1.5V
5.5
Min
0.7
undershoot
GND
6.0
6.3125
6.5
0.5*VDDQ+0.2
7.0
VREF - 0.31
Rev. 1.2 October, 2004
VDDQ+0.6
Max-10
DDR333
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
DDR SDRAM
Specification
Unit
V
V
V
V
DDR200/266
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
Note
1
2