K4H561638F-ULB3 Samsung Semiconductor, K4H561638F-ULB3 Datasheet - Page 14

• Manufacturer Part Number: K4H561638F-ULB3
• Manufacturer: Samsung Semiconductor
• Type: DDR SDRAMr

Specifications of K4H561638F-ULB3

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 200mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

DDR SDRAM 256Mb F-die (x8, x16) Pb-Free
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Parameter
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Rev. 1.2 October, 2004
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Specification
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V